SGS Thomson Microelectronics STP4NK80ZFP, STP4NK80Z, STD4NK80Z, STD4NK80Z-1 Datasheet
STP4NK80Z - STP4NK80ZFP
STD4NK80Z - STD4NK80Z-1
N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™ Power MOSFET
TYPE V
STP4NK80Z
STP4NK80ZFP
STD4NK80Z
STD4NK80Z-1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GAT E CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VER Y GO OD MANUFACTURING
800 V
800 V
800 V
800 V
(on) = 3 Ω
DS
DSS
R
DS(on)
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
I
D
3A
3A
3A
3A
Pw
80 W
25 W
80 W
80 W
REPEATIBILITY
DESCRIPTION
The SuperME SH™ series is obtained through an
extreme optimization of S T’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
3
2
TO-220
DPAK
1
TO-220FP
3
1
IPAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LI GHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP4NK80Z P4NK80Z TO-220 TUBE
STP4NK80ZFP P4NK80ZFP TO-220FP TUBE
STD4NK80ZT4 D4NK80Z DPAK TAPE & REEL
STD4NK80Z-1 D4NK80Z IPAK TUBE
1/13February 2003
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z -1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP4NK80Z STP4NK80ZFP
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
800 V
800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 12 12 (*) 12 A
Total Dissipation at TC= 25°C
3 3 (*) 3 A
1.89 1.89 (*) 1.89 A
80 25 80 W
Derating Factor 0.64 0.21 0.64 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3000 KV
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤4A, di/dt ≤200A/µs, VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55to150 °C
STD4NK80Z
STD4NK80Z-1
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 5 1.56 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
DPAK
IPAK
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID=IAR,VDD=50V)
j
3A
190 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integ rated Zener diodes thus avoid the
usage of external components.
2/13
STP4NK80Z - STP4NK 80Z FP - STD4NK80Z - STD4NK80Z-1
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 800 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 30V ±10 µA
GS
V
DS=VGS,ID
=50µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 1.5 A 3 3.5 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID= 1.5 A 2.9 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 575
V
DS
67
13
VGS=0V,VDS= 0V to 400 V 60 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=400V,ID= 1.5 A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
=640V,ID=3A,
V
DD
V
=10V
GS
13
12
22.5
4.2
11.3
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 400 V, ID= 1.5 A
R
=4.7ΩVGS=10V
G
35
32
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
f
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 640 V, ID=3A,
V
DD
RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)
18
7.5
25
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD= 3 A, VGS=0
I
SD
VDD=80V,Tj= 150°C
(see test circuit, Figure 5)
= 3 A, di/dt = 100 A/µs
400
1520
7.6
when VDSincreases from 0 to 80%
oss
3
12
1.6 V
ns
ns
ns
ns
ns
A
A
ns
nC
A
3/13
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z -1
Safe Operating Area For TO-220/DPAK/IPAK
Safe Operating Area For TO-220FP
Thermal Impedance F or TO-220/DPAK/IPAK
Thermal Impedance For TO-220FP
Output Characteristics
4/13
Transfer Characteristics
Loading...