SGS Thomson Microelectronics STP4NC60FP, STP4NB30, STP4NB30FP, STP4NC60, STB4NC60-1 Datasheet
STP4NC60 - STP4NC60FP
STB4NC60-1
N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK
PowerMesh™II MOSFET
TYPE V
STP4NC60
STP4NC60FP
STB4NC60-1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
600V
600V
600V
(on) = 1.8Ω
R
DS(on)
<2.2Ω
<2.2Ω
<2.2Ω
I
D
4.2A
4.2A
4.2A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of m erit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CO NV ERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
TO-220
1
3
2
TO-220FP
I2PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)4NC60(-1) STP4NC60FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 3.5 3.5 V/ns
V
ISO
T
stg
T
(•)Pulse width limited by safe operating area
≤4.2A, di/dt ≤300A/µs, VDD≤ V
(1)I
SD
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed) 16.8 16.8(*) A
Total Dissipation at TC= 25°C
4.2 4.2(*) A
2.6 2.6(*) A
100 35 W
Derating Factor 0.8 0.28 W/°C
Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature
Max. Operating Junction Temperature
j
(BR)DSS,Tj≤TJMAX.
(*)Limited only by maximum Temperature allowed
–65to150 °C
1/10April 2003
STP4NC60/FP/STB4NC60-1
THERMAL DATA
TO-220/I2PAK
Rthj-case Thermal Resistance Junction-case Max 1.25 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
Maximum Lead Temperature For Soldering Purpose 300 °C
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
ID= 250 µA, VGS= 0 600 V
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±30V ±100 nA
GS
TO-220FP
4.2 A
250 mJ
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID=1.5 A
= 250µA
234V
1.8 2.2 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 72 pF
Reverse Transfer
Capacitance
D(on)xRDS(on)max,
ID=2A
V
=25V,f=1MHz,VGS=0
DS
3.7 S
475 pF
10 pF
2/10
STP4NC60/FP/STB4NC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 14 ns
Total Gate Charge
Gate-Source Charge 2.5 nC
Gate-Drain Charge 9 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 19 ns
Cross-over Time 24 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 4.2 A
(2)
Source-drain Current (pulsed) 16.8 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 2.7 µC
Reverse Recovery Current 9 A
=300V,ID=2A
DD
R
= 4.7Ω VGS=10V
G
(see test circuit, Figure 3)
V
=480V,ID= 4A,
DD
=10V
V
GS
V
= 480V, ID=4A,
DD
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)
ISD= 4.2A, VGS=0
I
= 4A, di/dt = 100A/µs,
SD
=100V,Tj=150°C
V
DD
(see test circuit, Figure 5)
14 ns
16.5 23.1 nC
15 ns
1.6 V
600 ns
Safe Operating Area for TO-220FPSafe Operating Area for TO-220 / I2PAK
3/10
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