SGS Thomson Microelectronics STP4NC60FP, STP4NC60 Datasheet
STP4NC60
STP4NC60FP
N - CHANNEL 600V- 1.8 Ω - 4.2 A TO-220/TO-220FP
PowerMESH ΙΙ MOSFET
TYPE V
ST P4 NC60
ST P4 NC60FP
n TYPICALR
n EXTREMELYHIGHdv/dt CAPABILITY
n 100% AVALANCHETESTED
n NEWHIGH VOLTAGEBENCHMARK
n GATECHARGE MINIMIZED
DS(on)
DSS
600 V
600 V
=1.8 Ω
DESCRIPTION
The PowerMESH ΙΙ is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*area figureof meritwhile keeping the device
at the leading edge for what concerns switching
speed,gate chargeand ruggedness.
APPLICATIONS
n HIGHCURRENT,HIGH SPEEDSWITCHING
n SWITHMODE POWER SUPPLIES(SMPS)
n DC-AC CONVERTERSFORWELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVER
R
DS(on)
<2.2 Ω
<2.2 Ω
I
D
4.2 A
4.2 A
3
2
1
TO-220 T0-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
ST P4NC6 0 ST P4 NC60FP
V
V
V
I
DM
P
dv/dt(
V
T
(•) Pulse width limited by safeoperating area (1)ISD≤ 4.2A, di/dt ≤ 200 A/µs,VDD≤ V
(*) Limited only by maximum temperature allowed
February 2000
Drain-s ource Voltage ( VGS= 0) 600 V
DS
Drain- gat e Volt age (RGS=20kΩ) 600 V
DGR
Gat e- source Voltage ± 30 V
GS
Drain Current (continuous) at Tc=25oC4.24.2(*)A
I
D
Drain Current (continuous) at Tc= 100oC2.62.6(*)A
I
D
(•) Drain Current ( pu ls ed) 16. 8 16.8 A
Tot al Dissipat ion at Tc=25oC 100 35 W
tot
Derat ing Fact or 0.8 0. 28 W/
1) Peak D iode R ecovery voltage s lope 3 3 V/ns
Ins ulat ion Withs tand Volt age (DC) 2000 V
ISO
Sto rage T emperatur e -65 to 150
stg
Max. Oper at in g Junc t ion Temperat ur e 150
T
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/9
STP4NC60/FP
THERMAL DATA
TO-220 TO-220FP
R
thj-cas e
Rthj- amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Sym b ol Param et er Max V alue Unit
I
AR
E
Therma l Resist ance Junction- case Max 1.25 3.57
Therma l Resist ance Junction- ambient M ax
Therma l Resist ance C as e -s ink Typ
Maxim um Lead T e m pera t ur e For Soldering Purpose
l
Avalanc he Current, Rep et it ive or Not -Repetitive
(pulse widt h limit ed by T
Single Pulse Av alanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
4.2 A
170 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
OFF
Sym b ol Param eter Tes t Condit ions Min. Ty p. Max. Unit
V
(BR) DSS
Drain-so urce
ID= 250 µAVGS= 0 600 V
Break down Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
V
= ± 30 V ± 100 nA
GS
1
50
ON (∗)
Sym b ol Param eter Tes t Condit ions Min. Ty p. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA234V
Static Drain-source On
VGS= 10V ID=2A 1.8 2.2 Ω
Resist ance
I
D(on)
On Stat e Drain Current VDS>I
D(on)xRDS(on)max
4.2 A
VGS=10V
DYNAMIC
Sym b ol Param eter Tes t Condit ions Min. Ty p. Max. Unit
g
(∗)Forward
fs
Transconduct ance
Input Capacit ance
iss
Output Capacitance
Reverse Transfer
rss
C
C
oss
C
Capacit ance
VDS>I
D(on)xRDS(on)maxID
=2A 3.7 S
VDS=25V f=1MHz VGS= 0 475
72
10
µA
µA
pF
pF
pF
2/9
STP4NC60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Sym b ol Param eter Tes t Condit ions Min. Typ. Max . Unit
t
d(on)
t
r
Turn-on T ime
Rise Tim e
VDD=300V ID=2A
=4.7 Ω VGS=10V
R
G
(see test circuit , figure 3)
Q
Q
Q
Total Gate Charge
g
Gate-Sourc e Charge
gs
Gate-Drain Charg e
gd
VDD=480V ID=4.2A VGS= 10 V 16.5
SWITCHING OFF
Sym b ol Param eter Tes t Condit ions Min. Typ. Max . Unit
t
r(Voff)
t
t
Off -voltag e Ri s e T ime
Fall Time
f
Cross -over Tim e
c
VDD=480V ID=4.2A
=4.7 Ω VGS=10V
R
G
(see test circuit , figure 5)
SOURCEDRAIN DIODE
Sym b ol Param eter Tes t Condit ions Min. Typ. Max . Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300µs, dutycycle 1.5 %
(•) Pulse width limitedby safe operatingarea
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗)ForwardOnVoltage ISD=4.2A VGS=0 1.6 V
Revers e R ecover y
rr
Time
Revers e R ecover y
rr
ISD= 4.2 A di/dt = 100 A/µs
=100V Tj= 150oC
V
DD
(see test circuit , figure 5)
Charge
Revers e R ecover y
Current
14
14
23.1 nC
2.5
9
15
19
24
4.2
16.8
600
2.7
9
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe OperatingArea Safe Operating Area for TO-220FP
3/9
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