SGS Thomson Microelectronics STP4NC50FP, STP4NC50 Datasheet
STP4NC50
STP4NC50FP
N-CHANNEL 500V - 2.2Ω - 4A TO-220/TO-220FP
PowerMeshII MOSFET
TYPE V
DSS
R
DS(on)
I
D
STP4NC50 500 V < 2.7 Ω 4A
STP4NC50FP 500 V < 2.7 Ω 4A
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 2.2 Ω
DS
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGHSPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FORWELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES ANDMOTOR DRIVES
3
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP4NC50 STP4NC50FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 3.5 V/ns
V
ISO
T
stg
T
(•)Pulse width limitedby safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C
(●)
Drain Current (pulsed) 12 16(*) A
TotalDissipation at TC=25°C
4 4(*) A
2.5 2.5(*) A
80 40 W
Derating Factor 0.64 0.32 W/°C
Insulation Withstand Voltage (DC) - 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(1)ISD≤4A, di/dt ≤100A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
1/9May 2000
STP4NC50/FP
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 3.12 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
=25°C, ID=IAR,VDD=50V)
j
I
= 250 µA, VGS=0
D
= Max Rating
V
DS
=0)
DS
GS
=0)
V
= Max Rating, TC= 125 °C
DS
= ±30V
V
GS
500 V
10 A
110 mJ
1 µA
50 µA
±100 nA
(1)
ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On StateDrain Current
V
DS=VGS,ID
= 10V, ID= 1.5 A
V
GS
V
DS>ID(on)xRDS(on)max,
= 250µA
VGS=10V
234V
2.2 2.7 Ω
4A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
(1)
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 52 pF
Reverse Transfer
Capacitance
DS>ID(on)xRDS(on)max,
ID=2A
V
= 25V, f = 1 MHz, VGS=0
DS
3S
315 pF
7.7 pF
2/9
STP4NC50/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
Q
gs
Q
gd
Turn-on Delay Time
Rise Time
TotalGate Charge
g
Gate-Source Charge 2.7 nC
Gate-Drain Charge 6.1 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 13 ns
Cross-over Time 20 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 4 A
(2)
Source-drain Current (pulsed) 16 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.64 µC
Reverse Recovery Current 8.2 A
V
= 300 V,ID=2A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
V
= 400V,ID=4A,
DD
= 10V
V
GS
V
= 400V,ID=4A,
DD
=4.7Ω, VGS= 10V
R
G
(see test circuit, Figure 5)
ISD= 4 A, VGS=0
I
=4 A, di/dt = 100A/µs
SD
= 100V,Tj= 150°C
V
DD
(see test circuit, Figure 5)
10 ns
13 ns
12.5 17 nC
15 ns
1.6 V
400 ns
Safe Operating Area for TO-220 SafeOperating Area for TO-220FP
3/9
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