SGS Thomson Microelectronics STP4NB50FP, STP4NB50 Datasheet
STP4NB50
STP4NB50FP
N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP
PowerMesh™ MOSFET
PRELIMINARY DATA
TYPE V
STP4NB50
STP4NB50FP
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DS
DSS
500 V
500 V
(on) = 2.5 Ω
R
DS(on)
< 2.8 Ω
< 2.8 Ω
I
D
3.8 A
2.5 A
DESCRIPTION
Using the latest high voltage ME SH OVERLAY™
process, STMicroelectronics has designed an a dvanced family of power MOSFETs with outstanding
performances. The new patent pending strip lay out
coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
TO-220
1
TO-220FP
1
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP4NB50 STP4NB50FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
stg
T
j
(•)Pulse width limited by safe operating area
April 2003
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 15.2 15.2 A
Total Dissipation at TC= 25°C
3.8 2.5 A
2.4 1.6 A
80 35 W
Derating Factor 0.64 0.28 W/°C
Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD≤4A,di/dt≤200A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
1/7
STP4NB50 - ST P4N B 50FP
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.56 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID=IAR,VDD=50V)
j
ID= 250 µA, VGS= 0 500 V
3.8 A
220 mJ
Breakdown Voltage
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
DS
VDS= Max Rating, TC= 125 °C
V
= ±30V ±100 nA
GS
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 1.9 A
= 250µA
234V
2.5 2.8 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 62 pF
Reverse Transfer
Capacitance
D(on)xRDS(on)max,
ID= 1.9 A
V
=25V,f=1MHz,VGS=0
DS
2.3 S
400 pF
7.5 pF
2/7
STP4NB50 - STP4NB50FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 8 ns
Total Gate Charge
Gate-Source Charge 6.5 nC
Gate-Drain Charge 5 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time 5 ns
Cross-over Time 14 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 3.8 A
(2)
Source-drain Current (pulsed) 15.2 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 980 nC
Reverse Recovery Current 9 A
= 250V, ID= 1.9 A
DD
R
=4.7ΩVGS= 10V
G
(see test circuit, Figure 3)
V
= 400V, ID= 3.8 A,
DD
VGS= 10V
V
= 400V, ID= 3.8 A,
DD
= 4.7Ω, VGS=10V
R
G
(see test circuit, Figure 5)
ISD= 3.8 A, VGS=0
I
= 3.8 A, di/dt = 100A/µs,
SD
VDD= 100V, Tj= 150°C
(see test circuit, Figure 5)
11 ns
15 21 nC
8ns
1.6 V
245 ns
3/7
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