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STP4NB100
N - CHANNEL1000V - 4Ω - 3.8A - TO-220/TO-220FP
TYPE V
STP4NB100
STP4NB100FP
■ TYPICALR
■ EXTREMELYHIGHdv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
1000 V
1000 V
=4
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Ω
R
DS(on)
<4.4Ω
<4.4
Ω
I
D
3.8 A
3.8 A
STP4NB100FP
PowerMESH MOSFET
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP 4NB100 ST P4NB100F P
V
V
V
I
DM
P
dv/dt(
V
T
(•) Pulse width limited by safeoperating area (1)ISD≤ 3.8A, di/dt ≤ 200 A/µs, VDD≤ V
(*) Limited only by maximum temperatureallowed
October 1999
Drain-source V oltage (VGS=0) 1000 V
DS
Drain- gate Voltag e (RGS=20kΩ)
DGR
Gate-source Voltage ± 30 V
GS
Drain Current ( co nt inu ous) at Tc=25oC 3.8 3.8(* ) A
I
D
Drain Current ( co nt inu ous) at Tc= 100oC 2.4 2.4(* ) A
I
D
1000 V
(•) Drain Current (pulsed) 15.2 15.2 A
Tota l Dissipati on at Tc=25oC 125 40 W
tot
Derating F actor 1 0 .32 W/
1) Peak Diode Recove r y vo lt age slope 4 4 V/ns
Insulation Withstand Voltage (DC) 2000 V
ISO
Stor age Temper ature -65 t o 150
stg
Max. Op er at i ng Ju nc tion Temperature 150
T
j
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
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STP4NB100/STP4NB100FP
THERMAL DATA
TO-220 TO- 220F P
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Ma x 1 3.12
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Typ
Maximum Lead Te m pe ra t ure For So lder ing Purp ose
l
Avalanche C urrent, R epetitive or Not-Repetitive
(pulse width limited by T
Single P ul s e Avalan che Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
3.8 A
360 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
1000 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur rent (V
GS
Gat e- bod y L eak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
=± 30 V
V
GS
1
50
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Sta t ic Drain -s ource On
V
DS=VGSID
= 250µA
VGS=10V ID=2A 4 4.4 Ω
345V
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
3.8 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=2A 1.5 3 S
VDS=25V f=1MHz VGS= 0 1400
117
7
µ
µA
pF
pF
pF
A
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STP4NB100/STP4NB100FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
r
Rise Ti m e
t
VDD=500V ID=2A
R
=4.7
G
Ω
VGS=10V
20
9
(see test circuit, figure 3)
Q
Q
Q
Tot al Gat e Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 800 V ID=4A VGS=10V 32
12
11
45 nC
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Tim e
Fall T ime
f
Cross-over T ime
c
VDD=800V ID=4A
=4.7 ΩVGS=10V
R
G
(see test circuit, figure 5)
15
12
20
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
3.8
15.2
(pulsed)
(∗)ForwardOnVoltage ISD=3.8A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
=4A di/dt=100A/µs
I
SD
= 100 V Tj=150oC
V
DD
(see test circuit, figure 5)
750
5.4
Charge
Reverse Recovery
14.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area for TO-220 SafeOperating Area for TO-220FP
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