SGS Thomson Microelectronics STP4NB100FP, STP4NB100 Datasheet

STP4NB100



N - CHANNEL1000V - 4Ω - 3.8A - TO-220/TO-220FP

TYPE V

STP4NB100 STP4NB100FP

■ TYPICALR

■ EXTREMELYHIGHdv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

1000 V 1000 V

=4

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Ω

R

DS(on)

<4.4Ω <4.4

Ω

I

D

3.8 A

STP4NB100FP

PowerMESH MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SWITCHMODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP 4NB100 ST P4NB100F P

V

I

DM

P

dv/dt(

V

T

(•) Pulse width limited by safeoperating area (1)ISD≤ 3.8A, di/dt ≤ 200 A/µs, VDD≤ V (*) Limited only by maximum temperatureallowed

October 1999

Drain-source V oltage (VGS=0) 1000 V

DS

Drain- gate Voltag e (RGS=20kΩ)

DGR

Gate-source Voltage ± 30 V

GS

Drain Current ( co nt inu ous) at Tc=25oC 3.8 3.8(* ) A

I

D

Drain Current ( co nt inu ous) at Tc= 100oC 2.4 2.4(* ) A

I

D

1000 V

(•) Drain Current (pulsed) 15.2 15.2 A

Tota l Dissipati on at Tc=25oC 125 40 W

tot

Derating F actor 1 0 .32 W/

1) Peak Diode Recove r y vo lt age slope 4 4 V/ns

Insulation Withstand Voltage (DC)  2000 V

ISO

Stor age Temper ature -65 t o 150

stg

Max. Op er at i ng Ju nc tion Temperature 150

T

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

1/9

STP4NB100/STP4NB100FP

THERMAL DATA

TO-220 TO- 220F P

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Ma x 1 3.12 Ther mal Resistanc e Junct ion-ambient Max

Ther mal Resistanc e Case-sink Typ Maximum Lead Te m pe ra t ure For So lder ing Purp ose

l

Avalanche C urrent, R epetitive or Not-Repetitive (pulse width limited by T

Single P ul s e Avalan che Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

3.8 A

360 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

=250µAVGS=0

I

D

1000 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain Cur rent (V

GS

Gat e- bod y L eak ag e Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Sta t ic Drain -s ource On

V

DS=VGSID

= 250µA

VGS=10V ID=2A 4 4.4 Ω

345V

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

3.8 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

Input Capac i t ance

iss

Out put Capacitanc e

oss

Reverse Tr ansfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=2A 1.5 3 S

VDS=25V f=1MHz VGS= 0 1400

117

7

µ µA

pF pF pF

A

2/9

STP4NB100/STP4NB100FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Turn-on Time

r

Rise Ti m e

t

VDD=500V ID=2A R

=4.7

G

Ω

VGS=10V

20

9

(see test circuit, figure 3)

Q Q Q

Tot al Gat e Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD= 800 V ID=4A VGS=10V 32

12 11

45 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

Off-voltage Rise Tim e Fall T ime

f

Cross-over T ime

c

VDD=800V ID=4A

=4.7 ΩVGS=10V

R

G

(see test circuit, figure 5)

15 12 20

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current

3.8

15.2

(pulsed)

(∗)ForwardOnVoltage ISD=3.8A VGS=0 1.6 V

Reverse Recovery

rr

Time Reverse Recovery

rr

=4A di/dt=100A/µs

I

SD

= 100 V Tj=150oC

V

DD

(see test circuit, figure 5)

750

5.4 Charge Reverse Recovery

14.5

Current

ns ns

nC nC

ns ns ns

A A

ns

µ

A

C

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9