SGS Thomson Microelectronics STP4NA60FP Datasheet
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STP4NA60FP 600 V < 2.2 Ω 2.7 A
R
DS(on)
I
D
STP4NA60FP
PRELIMINARY DATA
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOWINTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DS(on)
=1.85 Ω
o
C
DESCRIPTION
This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized cell layout coupled with a new
proprietary edge ter mination concur to give
the device low RDS(on) and ga te charge,
unequalled ruggedness and superior
switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Value Uni t
V
V
DGR
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
October 1997
Drain-source Voltage (VGS=0) 600 V
DS
Drain- gate Voltage (RGS=20kΩ)600V
Gate-sourc e Volt age ± 30 V
GS
Drain Current (c ont inuo us) a t Tc=25oC2.7A
I
D
Drain Current (c ont inuo us) a t Tc=100oC1.8A
I
D
(•) Drain Current (puls ed) 17.2 A
Total Dissipat i on at Tc=25oC35W
tot
Derat ing Factor 0.28 W/
Insul at ion W ithstand Voltage (DC) 2000 V
ISO
Stora ge Temperature -65 to 15 0
stg
Max. Operat ing J unc tion Tem perat u r e 150
T
j
o
C
o
C
o
C
1/5
STP4NA60FP
THERMAL DATA
R
thj-case
R
thj- amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Val ue Uni t
I
AR
E
Ther mal Resistance Ju nct ion-cas e Max
Ther mal Resistance Ju nct ion-ambien t Max
Ther mal Resistance Ca se-s i nk Typ
Maximum Lead Temp erat u r e For Soldering Purpos e
l
Avalanche Current, Repetit iv e or Not-Repe t it ive
(pulse width limited by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
3.57
62.5
0.5
300
4.3 A
95 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAVGS= 0 600 V
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
=0)
Gat e- bod y Leakage
Current (V
DS
=0)
V
=MaxRating
DS
=MaxRating Tc= 100oC
V
DS
V
= ± 30 V ± 100 nA
GS
25
250
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
Gat e Thre shold Voltage VDS=VGSID=250µA2.2533.75V
St at ic Drain-so ur ce O n
1.85 2.2 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
4.3 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
ReverseTransfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=2A 2.5 3.7 S
VDS=25V f=1MHz VGS= 0 700
100
24
910
130
35
µA
µA
pF
pF
pF
2/5
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