SGS Thomson Microelectronics STP4NA60FI, STP4NA60 Datasheet
STP4NA60
STP4NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STP 4NA60
STP 4NA60FI
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
DSS
600 V
600 V
= 1.85 Ω
R
DS(on)
<2.2Ω
<2.2Ω
I
D
4.3 A
2.7 A
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
and gate charge, unequalled
DS(on)
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST P4NA60 ST P4NA60FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 600 V
DS
Drain - gat e Voltage (RGS=20kΩ)600V
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc=25oC4.32.7A
I
D
Drain Current (continuous) at Tc=100oC2.8 1.8A
I
D
(•) Drain Current (pulsed) 17.2 17.2 A
Total Di ssipation at Tc=25oC 100 40 W
tot
Derat ing Factor 0.8 0.32 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
o
o
C
C
C
1/10
STP4NA60/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance J unction- c ase Max 1.25 3.12
Thermal Resistance Junc tion-am bie nt Max
Thermal Resistance Cas e-sink Typ
Maximum Lead T emperature For Solder in g Purp os e
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
62.5
0.5
300
4.3 A
95 mJ
4mJ
2.8 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 600 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
= ± 30 V ± 100 nA
V
GS
25
250
ON (∗)
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n
VGS=10V ID=2A 1.85 2.2 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
4.3 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=2A 2.5 3.7 S
VDS=25V f=1MHz VGS=0 700
100
24
910
130
35
µA
µA
pF
pF
pF
2/10
STP4NA60/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Turn-on C urrent S lope VDD=480V ID=4A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=300V ID=2A
RG=47 Ω VGS=10V
23
60
(see test circuit, figure 3)
185 A/µs
RG=47 Ω VGS=10V
(see test circuit, figure 5)
VDD= 480 V ID=2A VGS=10V 32
7
14
VDD=480V ID=4A
RG=47 Ω VGS=10V
(see test circuit, figure 5)
45
17
70
35
85
45 nC
60
25
95
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condi tions Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
4.3
17.2
(pulsed)
V
(∗) F or w ar d On Voltage ISD=4.3A VGS=0 1.6 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=4A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
480
6
Charge
I
RRM
Reverse Recovery
25
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas for TO-220 Safe Operating Areas for ISOWATT220
A
A
ns
µC
A
3/10
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