SGS Thomson Microelectronics STP4NA100 Datasheet
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
STP4NA100 1000 V <3. 5 Ω 4.2 A
R
DS(on)
I
D
STP4NA100
PRELIMINARY DATA
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTA GE RA TING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE CH ARGE MINIMIZED
■ REDUCED THRESHOLD VO LTA GE SPREA D
DS(on)
= 2.9 Ω
o
C
DESCRIPTION
This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized cell layout coupled with a new
proprietary edge termination concur to give
the device low RDS(on) and gate charge,
unequalled ruggedness and superior
switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SWITCH MODE P OW ER SUP P LIE S (S MP S)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SU PP LIE S AND MOTO R DRIV E
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
October 1997
Drain-source Voltage (VGS = 0) 1000 V
DS
DGR
GS
I
D
I
D
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage ± 30 V
Drain Current (continuous) at Tc = 25 oC 4.2 A
Drain Current (continuous) at Tc = 100 oC 2.6 A
1000 V
(•) Drain Current (pulsed) 16.8 A
Total Dissipation at Tc = 25 oC 125 W
tot
Derating Factor 1 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/5
STP4NA100
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max, δ < 1%)
j
DD
= 50 V)
1
62.5
0.5
300
4.2 A
160 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
1000 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100 oC
DS
V
= ± 30 V
GS
50
250
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS ID = 250 µA
V
DS
VGS = 10V ID = 2.1 A 3 3.5 Ω
2.25 3 3.75 V
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
ReverseTransfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =2.1 A 2 5.5 S
= 0 1650
GS
127
31
µA
µA
A
pF
pF
pF
2/5
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