SGS Thomson Microelectronics STP4N20 Datasheet
STP4N20
N - CHANNEL 200V - 1.3 Ω - 4A TO-220
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STP4N20 200 V < 1.5 Ω 4A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE
■ HIGHCURRENT CAPABILITY
■ 150
■ APPLICATIONORIENTED
o
C OPERATINGTEMPERATURE
DS(on)
= 1.3 Ω
CHARACTERIZATION
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ DC-DCCONVERTERS & DC-AC INVERTERS
■ TELECOMMUNICATIONPOWER SUPPLIES
■ INDUSTRIAL MOTOR DRIVERS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulsewidth limited by safeoperating area
February 1999
Dra in- sour c e Voltage ( VGS= 0) 200 V
DS
Dra in- gate V ol t age (RGS=20kΩ) 200 V
DGR
Gat e-source Voltage
GS
I
Dra in Current (contin uous) at Tc=25oC4A
D
I
Dra in Current (contin uous) at Tc=100oC2.5A
D
20 V
±
(•) Dra in Current (pulsed) 16 A
Tot al Dissipation at Tc=25oC60W
tot
Der ati ng Factor 0.48 W/
St orage Tem pe r at ur e -65 to 150
stg
T
Max. Operat ing Junc tion Tem perature 150
j
o
C
o
C
o
C
1/8
STP4N20
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead T emperat ure For Solder ing Purp os e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A v alan che Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
2.08
62.5
0.5
300
4A
150 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 200 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-sour c e On
VGS=10V ID=30A 1.3 1.5
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
4A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitanc e
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=2 A 0.8 1.3 S
VDS=25V f=1MHz VGS= 0 290
50
9
µ
µA
Ω
pF
pF
pF
A
2/8
STP4N20
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
Tur n-on Delay Time
Rise T ime
r
VDD= 100 V ID=2A
R
=4.7
G
Ω
VGS=10V
7
6
(Resis t iv e Load, see fig. 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD= 160 V ID=4A VGS=10V 13
7
4
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Delay Time
t
Fall T ime
f
VDD=15V ID=40A
R
G
=4.7
Ω
VGS=10V
105
120
(Resis t iv e Load, see fig. 3)
t
r(Voff)
t
t
Off-volt age Rise Tim e
Fall T ime
f
Cross-over Time
c
V
=160V ID=4A
clamp
R
=4.7
G
Ω
VGS=10V
(Indu ct iv e Load, s e e fig. 5)
6
5
13
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
4
16
(pulsed)
(∗)ForwardOnVoltage ISD= 160 A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 4 A di/dt = 100 A/µs
=30V
V
DD
(see test circuit, fig. 5)
70
1
Charge
Reverse Recovery
13
Current
ns
ns
nC
nC
nC
ns
ns
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area ThermalImpedance
3/8
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