SGS Thomson Microelectronics STP4N100FI, STP4N100 Datasheet
STP4N100
STP4N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
STP 4N100
STP 4N100FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
DS(on)
DSS
1000 V
1000 V
= 3.1 Ω
R
DS(on)
I
D
<3.5Ω
<3.5Ω4A2.2 A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
■ DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STP 4N100 STP4 N100FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
December 1996
Drain - s ource Voltage (VGS= 0) 1000 V
DS
Drain- gate Voltage (RGS=20kΩ) 1000 V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC42.2A
I
D
Drain Current (continuous) at Tc=100oC2.5 1.4A
I
D
(•) Drain Current (pulsed) 16 16 A
Total Di ssipation a t Tc=25oC 125 40 W
tot
Derating F actor 1 0.32 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 t o 150
stg
Max. Operating Jun ction T emperature 150
T
j
o
o
o
C
C
C
1/10
STP4N100/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e M ax 1 3.12
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For So ldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
62.5
0.5
300
4A
160 mJ
8.3 mJ
2.5 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 1000 V
Break d own Volta ge
I
DSS
I
GSS
Zer o G at e V oltage
Drain Current (VGS=0)
Gat e- body Leakage
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC
= ± 20 V ± 10 0 nA
V
GS
25
250
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold V oltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
VGS=10V ID=2A 3.1 3.5 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
4A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=2A 2 4 S
VDS=25V f=1MHz VGS= 0 1230
165
70
1500
200
85
µA
µA
pF
pF
pF
2/10
STP4N100/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T ime
t
Rise Time
r
Turn-on Current S lope VDD=800V ID=4A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAINDIODE
VDD=800V ID=2A
RG=50 Ω VGS=10V
36
30
(see test circuit, figure 3)
180 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 800 V ID=4A VGS=10V 80
8
40
VDD=800V ID=4A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
100
25
155
45
165
100 nC
125
32
190
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain C urrent
(•)
Source-drain C urrent
4
16
(pulsed)
V
(∗) F or w ar d On Voltage ISD=4A VGS=0 2 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=4A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
1200
30
Charge
I
RRM
Reverse Recovery
50
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
A
A
ns
µC
A
3/10
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