SGS Thomson Microelectronics STP45NF3LL, STP45NF3LLFP Datasheet
STP45NF3LL - STP45NF3LLFP
STB45NF3LL
N-CHANNEL 30V - 0.014Ω - 45A TO-220 - TO220FP - D2PAK
STripFET II™ POWER MOSFET
TYPE V
STP45NF3LL
STP45NF3LLFP
STB45NF3LL
■ TYPICAL R
■ OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4 .5V
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ ADDSUFFIX“T4”FORO RDE RING IN TAPE &
DS
DSS
30 V
30 V
30 V
(on) = 0.014Ω @4.5V
R
DS(on)
<0.018Ω
<0.018Ω
<0.018Ω
I
D
45 A
45 A
27 A
REEL
DESCRIPTION
This application specific Power MOSFET is the
third genarat ion of STMicroelectronics unique
“Single Feature Size
™” strip-based process. The
resulting transistor sho ws the best trade-off between on-res istance ang gate charge. When used
as high and low side in buck regulators, it gives the
best perfo rmance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high efficiency are of paramount impo rtance.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
3
2
1
TO-220
1
D2PAK
3
2
TO-220FP
INTERNAL SCHE M ATIC DIAGRAM
3
1
ABSOLUTE MAX IMUM RATINGS
Symbol Parameter Value Unit
2
PAK
45 27 A
32 19 A
70 25 W
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
TO-220/D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 16 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 180 108 A
Total Dissipation at TC= 25°C
Derating Factor 0.46 0.167 W/°C
(1)
E
AS
Single Pulse Avalanche Energy 241 mJ
Viso Insulation Withstand Voltage (DC) -- 2500 V
T
stg
T
j
(●) Pulse width limited by safe operating area
Storage Temperature
Max. Operating Junction Temperature
–55to175 °C
(1) Starting Tj=25°C,ID= 22.5A, VDD=24V
TO-220FP
30 V
30 V
1/11November 2002
STP45NF3LL - STB45NF3LL
THERMAL DATA
TO-220
2
D
PAK
Rthj-case Thermal Resistance Junction-case Max 2.14 6 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
ELECTRICAL CHARACTE RISTICS (TCASE = 25 °C UNLE S S OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 30 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ± 16 V ±100 nA
GS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS=VGS,ID
VGS=10V,ID= 22.5 A
VGS= 4.5V, ID= 22.5 A
= 250µA
1V
TO-220FP
300 °C
1µA
10 µA
0.014 0.018 Ω
0.016 0.020 Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15 V,ID=22.5A
g
fs
V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 250 pF
Reverse Transfer
=25V,f=1MHz,VGS=0
DS
Capacitance
20 S
800 pF
60 pF
2/11
STP45NF3LL - STB45NF3LL
ELECTRICAL CHARACTE RISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 100 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 45 A
(2)
Source-drain Current (pulsed) 180 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=15V,ID= 22.5A
DD
= 4.7Ω VGS=4.5V
R
G
(Resistive Load, see Fig. 3)
=24V,ID= 45A,
V
DD
V
=5V
GS
= 15V, ID= 22.5A,
V
DD
RG=4.7Ω, VGS= 4.5V
(Resistive Load, see Fig. 3)
ISD= 45A, VGS=0
= 45A, di/dt = 100A/µs,
I
SD
VDD=15V,Tj= 150°C
(see test circuit, Figure 5)
17 ns
12.5
17 nC
4.6
5.2
20
21
1.3 V
35
44
2.5
nC
nC
ns
ns
ns
nC
A
Safe Operating Area for TO-220/D2PAK Thermal Impedance for TO-220/D2PA K
3/11
STP45NF3LL - STB45NF3LL
Thermal Impedance for TO-220FPSafe Operating Area for TO-2 20FP
Transfer CharacteristicsOutput Characteristics
Transconductance
4/11
Static Drain-source On Resistance
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