SGS Thomson Microelectronics STP45NEO6 Datasheet
STP45NE06
STP45NE06FP
N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP
STripFET POWER MOSFET
PRELIMINARY DATA
■ TYPICALR
DS(on)
=0.022 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
o
C
■ APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size ”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
STP 45NE06 ST P 45 N E0 6 F P
V
DS
Drain-source V olt age (VGS=0) 60 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)
60 V
V
GS
Gat e- sourc e Volt age ± 20 V
I
D
Drain Current (con t inuous) at Tc=25oC4525A
I
D
Drain Current (con t inuous) at Tc=100oC 31 17.5 A
I
DM
(•) Drain Current (pul sed) 180 180 A
P
tot
Tot al D is sip at ion at Tc=25oC10035W
Derat in g Fac tor 0.67 0.23 W/
o
C
V
ISO
Ins ulation Withstand Voltage (D C) 2000 V
dv/ dt Peak Di ode Recovery volt age sl ope 7 V/ns
T
stg
Sto rage T emperat ur e -65 to 175
o
C
T
j
Max. Oper at in g J unction Te mperatu r e 175
o
C
(•) Pulse width limitedby safe operating area (1)ISD≤ 20 A,di/dt ≤ 300 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX
TYPE V
DSS
R
DS(on)
I
D
STP45NE06
STP45NE06FP
60 V
60 V
<0.028Ω
<0.028Ω
45 A
25 A
June 1998
TO-220 TO-220FP
1
2
3
1
2
3
1/6
THERMAL DATA
TO - 2 20 TO-220F P
R
thj-case
Ther mal Resist ance Junctio n- case M ax 1.5 4.28
o
C/W
R
thj- amb
R
thc-sin k
T
l
Ther mal Resist ance Junctio n- ambient Max
Ther mal Resist ance Case-si nk Ty p
Maximum Lead Te mpera t u re Fo r Solderi ng P urpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Paramete r Max Valu e Uni t
I
AR
Avalanch e Curre nt , Rep etit ive or Not-Re petitiv e
(pulse width limited by T
j
max)
45 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25oC, ID=IAR,VDD=25V)
150 mJ
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symbol Parameter Test C ondition s Min. Typ. Max. Un it
V
(BR)DSS
Drain-sou rc e
Breakdown Voltage
I
D
=250µAVGS=0
60 V
I
DSS
Zer o Gate V o lt age
Drain Cur re nt (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc=125oC
1
10
µA
µA
I
GSS
Gat e-body Leaka ge
Current (V
DS
=0)
V
GS
= ± 20 V
± 100 nA
ON (∗)
Symbol Parameter Test C ondition s Min. Typ. Max. Un it
V
GS(th )
Gate Threshold
Voltage
V
DS=VGSID
=250µA
234V
R
DS(on)
Stati c D rain-source On
Resistance
VGS=10V ID= 22.5A 0.022 0.028 Ω
I
D(on)
On St at e D ra in Cu rr e nt VDS>I
D(on)xRDS(on)max
VGS=10V
45 A
DYNAMIC
Symbol Parameter Test C ondition s Min. Typ. Max. Un it
g
fs
(∗)Forward
Tr anscond uctanc e
VDS>I
D(on)xRDS(on)maxID
=22. 5 A 15 30 S
C
iss
C
oss
C
rss
Input Capaci t an c e
Out put Capac itanc e
Reverse T rans fer
Capa cit an c e
VDS=25V f=1MHz VGS= 0 2700
350
70
3600
480
100
pF
pF
pF
STP45NE06/FP
2/6
Loading...