SGS Thomson Microelectronics STP45NE06FP, STP45NE06 Datasheet
STP45NE06
®
N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-2 20FP
TYPE V
STP45NE06
STP45NE06FP
■ TYPICAL R
■ EXCEPT ION AL dv/dt CAP AB ILI T Y
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE 100
■ APPLI CATION ORIENTED
DS(on)
DSS
60 V
60 V
= 0.022 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
R
DS(on)
< 0.028 Ω
< 0.028 Ω
o
C
I
D
45 A
25 A
STP45NE06FP
STripFET POWER MOSFET
PRELIMINARY DATA
3
2
1
TO-220 TO-220FP
INTER NAL SCH E M ATI C DIAG RA M
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPE ED SWI TCHING
■ SOLENOID AND RELAY DRIVER S
■ MOTOR CONT RO L, AUDIO AM PLIFI ER S
■ DC-DC & DC-AC CONVERT E RS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP45NE06 STP45NE06FP
V
V
V
IDM(•) Drain Current (pulsed) 180 180 A
P
V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD ≤ 20 A, di/dt ≤ 300 A/µs, VDD ≤ V
June 1998
Drain-source Voltage (VGS = 0) 60 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC4525A
D
I
Drain Current (continuous) at Tc = 100 oC 31 17.5 A
D
Total Dissipation at Tc = 25 oC10035W
tot
60 V
Derating Factor 0.67 0.23 W/
Insulation Withstand Voltage (DC) 2 000 V
ISO
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/6
STP45NE06/FP
THERMAL DATA
TO-220 TO-220FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
E
Thermal Resistance Junction-case Max 1.5 4.28
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
ma x)
j
DD
= 25V)
62.5
0.5
300
45 A
150 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
60 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
234V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 22.5A 0.022 0.028 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
45 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗) Forward
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =22.5 A 15 30 S
70
3600
480
100
= 0 2700
GS
350
µA
µA
pF
pF
pF
2/6
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