SGS Thomson Microelectronics STP40NS15 Datasheet
STP40NS15
N-CHANNEL 150V - 0.042Ω - 40A TO-2 20
MESH OVERLAY™ MOSFET
PRELIMINARY DATA
TYPE V
DSS
STP40NS15 150 V <0.052
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ VERY LOW INTRINSIC C APAC ITANCES
■ GATE CHARGE MINIMIZED
(on) = 0.042Ω
DS
R
DS(on)
I
D
Ω
40A
DESCRIPTION
This powermos MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY
™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ PRIMARYSWITCH IN ISOLATED DC-DC
CONVERTERS
3
2
1
TO-220
I
NTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 9 V/ns
T
stg
T
j
(•)Pu l se width limited by safe operating area
October 2000
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
150 V
150 V
Gate- source Voltage ±20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 160 A
Total Dissipation at TC = 25°C
40 A
25 A
140 W
Derating Factor 0.933 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
1/6
STP40NS15
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.07 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 150 V
40 A
500 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 40 A
234V
0.044 0.052
Resistance
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max,
40 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 380 pF
Reverse Transfer
Capacitance
ID= 20A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
20 S
2400 pF
160 pF
Ω
2/6
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