SGS Thomson Microelectronics STP40NF10 Datasheet
N - CHANNEL 100V - 0.030Ω - 40A TO-220
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
DSS
ST P40NF10 100 V < 0.0 35 Ω 40 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.030 Ω
CHARACTERIZATION
R
DS(on)
I
STP40NF10
PRELIMINARY DATA
D
DESCRIPTION
This MOSFET series realized with STMicroelec-
3
2
1
tronics unique STripFET process has specifically
been designed to minimize input capacitanceand
TO-220
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and
Computerapplications. It is also intended for any
applicationswith low gate drive requirements.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCYDC-DC CONVERTERS
■ UPSAND MOTORCONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
E
AS
T
(•) Pulse width limitedby safe operating area (1) starting Tj
Dra in- sour c e Volta ge (VGS= 0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ) 100 V
DGR
Gate-s ource Voltage ± 20 V
GS
Dra in Cu rr ent (cont i nuous) at Tc=25oC40A
I
D
Dra in Cu rr ent (cont i nuous) at Tc= 100oC25A
I
D
(
Dra in Cu rr ent (pulsed) 160 A
•)
Tot al Dissipatio n at Tc=25oC 140 W
tot
Der ati ng F a c tor 0.93 W/
(1) Single Pu ls e Avalanche Energy 135 mJ
St orage T e m pe ra t ure -65 to 175
stg
Max. Operating Jun ct ion Te mperature 175
T
j
=25oC,ID=40A , VDD= 50V
o
C
o
C
o
C
May 2000
1/6
STP40NF10
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Tempe ra tur e For Soldering Purpos e
l
1.07
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA22.84V
Sta t ic Drain-s ource On
VGS=10V ID= 20 A 0.030 0.035 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
40 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t anc e
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=20 A 20 S
VDS=25V f=1MHz VGS= 0 1800
270
110
µA
µ
pF
pF
pF
A
2/6
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