SGS Thomson Microelectronics STP40N03L-20 Datasheet
STP40N03L-20
N - CHANNEL ENHANCEMENT MODE
”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V
DSS
STP40 N03L-20 30 V < 0.0 2 Ω 40 A
R
DS(on)
I
D
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
■ HIGH CURRENTCAPABILITY
o
■ 175
■ HIGH dV/dt CAPABILITY
■ APPLICATIONORIENTED
COPERATINGTEMPERATURE
DS(on)
=0.016 Ω
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ POWERMOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCRONOUSRECTIFICATION
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dV/dt(
T
(•) Pulse width limited bysafe operatingarea
March 1996
Drain-source Voltage ( VGS=0) 30 V
DS
Drain- gate Volt age (RGS=20kΩ)30V
DGR
Gat e- source Voltage ± 15 V
GS
I
Drain Curren t (co nt inu ous ) at Tc=25oC40A
D
I
Drain Curren t (co nt inu ous ) at Tc=100oC28A
D
(•) Drain Current (pulsed) 160 A
Tot al Dissipation at Tc=25oC90W
tot
Derating Factor 0.6 W/
1) Peak Diode Recov ery voltage slope 6 V/ns
St orage Temperatur e -65 to 175
stg
T
Max. Operating Junction Temperatur e 175
j
o
C
o
C
o
C
1/7
STP40N03L-20
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max V alue Uni t
I
AR
E
E
I
AR
Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Ma x
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se
l
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Avalanche Energy
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limi t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current , Repet it iv e or Not-Repe t it ive
=100oC, p ulse wid t h limited by Tjmax, δ <1%)
(T
c
1.66
62.5
0.5
300
40 A
300 mJ
75 mJ
28 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAVGS=0 30 V
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRatingx0.8 Tc= 125oC
DS
V
= ± 15 V ± 100 nA
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thre shold Volt age VDS=VGSID=250µA11.62V
St at ic Drain-source On
Resistance
VGS= 10V ID=20A
= 10V ID=20A Tc=100oC
V
GS
=5V ID=20A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on)max
0.016
0.019
40 A
0.02
0.04
0.023
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=20A 15 22 S
VDS=25V f=1MHz VGS= 0 1800
450
180
2300
580
230
Ω
Ω
Ω
pF
pF
pF
2/7
STP40N03L-20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=15V ID=10A
=4.7 Ω VGS=5V
R
G
(see test cir cuit, figure 3)
(di/dt)
Tur n-on C urr ent Slope VDD=24V ID=20A
on
R
=50 Ω VGS=5V
G
(see test cir cuit, figure 5)
Q
Q
Q
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
VDD=24V ID=20A VGS=5V 40
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall T ime
f
Cross-over Time
c
VDD=24V ID=20A
=4.7 Ω VGS=5V
R
G
(see test cir cuit, figure 5)
SOURCE DRAIN DIODE
20
80
30
100
200 A/ µs
60 n C
10
20
42
45
76
55
60
100
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
40
160
(pulsed)
(∗)ForwardOnVoltage ISD=40A VGS=0 1.5 V
V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 20 A di/ dt = 100 A/µs
=24V Tj= 150oC
V
DD
(see test cir cuit, figure 5)
65
0.12
Charge
I
RRM
Reverse Recovery
4
Current
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
(
1)I
≤ 40 A, di/dt≤ 300 A/µs, VDD≤ V
SD
(BR)DSS,Tj≤TJMAX
A
A
ns
µC
A
3/7
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