SGS Thomson Microelectronics STP3NK90ZFP, STP3NK90Z, STD3NK90Z-1, STD3NK90Z Datasheet
1/13November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP3NK90Z - STP3NK90ZFP
STD3NK90Z - STD3NK90Z-1
N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
TYPICAL RDS(on) = 4.1 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH ™ series is obtained through an
extreme optimi za tio n of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance s ignificantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH S PEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
Pw
STP3NK90Z
STP3NK90ZFP
STD3NK90Z
STD3NK90Z-1
900 V
900 V
900 V
900 V
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
< 4.8 Ω
3A
3A
3A
3A
90 W
25 W
90 W
90 W
SALES TYPE MARKING PACKAGE PACKAGING
STP3NK90Z P3NK90Z TO-220 TUBE
STP3NK90ZFP P3NK90ZFP TO-220FP TUBE
STD3NK90ZT4 D3NK90Z DPAK TAPE & REEL
STD3NK90Z-1 D3NK90Z IPAK TUBE
TO-220 TO-220FP
1
2
3
1
3
DPAK
3
2
1
IPAK
INTERNAL SCHEMATIC DIAGRAM
STP3NK90Z - STP3NK90ZFP - S TD3N K90Z - STD3NK90Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
(1) I
SD
≤3A, di/dt ≤200A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients thatmay occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP3NK90Z STP3NK90ZFP
STD3NK90Z
STD3NK90Z-1
V
DS
Drain-source Voltage (VGS=0)
900 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
900 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC= 25°C
3 3 (*) 3 A
I
D
Drain Current (continuous) at TC= 100°C
1.89 1.89 (*) 1.89 A
I
DM
()
Drain Current (pulsed) 12 12 (*) 12 A
P
TOT
Total Dissipation at TC= 25°C
90 25 90 W
Derating Factor 0.72 0.2 0.72 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2500 - V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55to150 °C
TO-220 TO-220FP
DPAK
IPAK
Rthj-case Thermal Resistance Junction-case Max 1.38 5 1.38 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
3A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
180 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
3/13
STP3NK90Z - STP3NK90ZFP - STD3NK90Z - STD3NK90Z-1
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited bysafe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDSincreases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID=1mA,VGS= 0 900 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
VDS= Max Rating, TC= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 30 V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
=50µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID= 1.5 A 4.1 4.8 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS=15V,ID= 1.5 A 2.7 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,VGS= 0 590
63
13
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
VGS=0V,VDS=0Vto400V 34 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD=450V,ID= 1.5 A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
18
7
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=720V,ID=3A,
V
GS
=10V
22.7
4.2
12
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
VDD= 720 V, ID= 1.5 A
R
G
=4.7ΩVGS=10V
(Resistive Load see, Figure 3)
45
18
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 450V, ID=3A,
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
14.5
15
16
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
3
12
A
A
VSD(1)
Forward On Voltage
ISD= 3 A, VGS=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A, di/dt = 100A/µs
VDD=100V,Tj=150°C
(see test circuit, Figure 5)
510
2.2
8.7
ns
µC
A
STP3NK90Z - STP3NK90ZFP - S TD3N K90Z - STD3NK90Z-1
4/13
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/DPAK/IPAK
Transfer Characteristics
Output Characteristics
Thermal Impedance For TO-220/DPAK/ IPAK
Thermal Impedance For TO-220FP
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