SGS Thomson Microelectronics STP3NC70Z Datasheet

STP3NC70Z

STP3NC70ZFP

N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP

Zener-Protected PowerMESH™III MOSFET

TYPE V

STP3NC70Z
STP3NC70Z FP

■ TYPICAL R

■ EXTREMELY HIGH dv/dt AND CAPABILITY

DS

DSS

700V
700V

(on) = 4.1Ω

R

DS(on)

< 4.7Ω
< 4.7Ω

I

D

2.5 A

2.5 A

GATE TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW GATE INPUT RESISTANCE

■ GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ P ow er
MOSFETs for very high voltage exhibits unsur­passed on-resistance per unit area while integrat­ing back-to-back Zener diodes betw een gate and
source. Such arrangement gives extra ESD capa­bility with higher ruggedness performance as re­quested by a large variety of single-switch
applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

TO-220

TO-220FP

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP3NC70Z STP3NC70ZFP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns

V

ISO

T

stg

T

j

(•)Pu l se width limite d by safe operati ng area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

700 V
700 V

Gate- source Voltage ± 25 V

Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C

(●)

Drain Current (pulsed) 10 10 A
Total Dissipation at TC = 25°C

2.5 2.5 (*) A

1.6 1.6 (*) A

65 35 W
Derating Factor 0.52 0.28 W/°C
Gate-source Current (DC) ±50 mA
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 1.5 KV

Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1) ISD ≤2.5A, di/dt ≤100A/µs, VDD ≤ V
(*) Limited by Maximum Temperature allowed

(BR)DSS

, Tj ≤ T

JMAX

1/10June 2001

STP3NC70Z/STP3NC70ZFP

THERMA L D ATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.92 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

∆BV

DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source

= 25 °C, ID = IAR, VDD = 50 V)

j

ID = 250 µA, VGS = 0 700 V

2.5 A

150 mJ

Breakdown Voltage

/∆TJBreakdown Voltage Temp.

ID = 1 mA, VGS = 0 0.8 V/°C

Coefficient
Zero Gate Voltage

Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±20V ±10 µA

GS

1µA

50 µA

ON

(1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

VGS = 10V, ID = 1.25 A

345V

4.1 4.7 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS > I

g

fs

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 50 pF
Reverse Transfer

Capacitance

ID= 1.25A

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

2S

530 pF

7pF

2/10

STP3NC70Z/STP3NC70ZFP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 11 ns
Total Gate Charge

Gate-Source Charge 4 nC
Gate-Drain Charge 7 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 33 ns
Cross-over Time 40 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

Source-drain Current 2.5 A

(2)

Source-drain Current (pulsed) 10 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge 0.6 µC
Reverse Recovery Current 7.5 A

= 350 V, ID = 1.25 A

DD

RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)

V

= 560V, ID = 2.5A,

DD

VGS = 10V

V

= 560V, ID = 2.5 A,

DD

RG=4.7Ω, V

GS

= 10V

(see test circuit, Figure 5)

ISD = 2.5 A, VGS = 0
I

= 2.5 A, di/dt = 100A/µs,

SD

VDD = 27V, Tj = 150°C
(see test circuit, Figure 5)

14 ns

17 24 nC

16 ns

1.6 V

175 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.

2. Pulse width li mited by safe operating area .

3. ∆V

= αT (25°-T ) BV

BV

GSO

(25°)

= 50 mA, VGS = 0

D

90 Ω

10

-4

/°C

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.

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