SGS Thomson Microelectronics STP3NB90, STP3NB90FP Datasheet
STP3NB90
®
N - CHANNEL 900V - 4 Ω - 3.5 A - TO-220/TO-220FP
TYPE V
STP3NB90
STP3NB90FP
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DS(on)
DSS
900 V
900 V
= 4
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Ω
R
DS(on)
< 4.2 Ω
< 4.2 Ω
I
D
3.5 A
3.5 A
STP3NB90FP
PowerMESH MOSFET
TARGET DATA
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCH ING
■
SWITCH MODE POWER SUPP LIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTI BLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP4NB90 STP4NB90FP
V
V
V
I
P
dv/dt(
V
T
(*) Pulse width limited by safe operating area (1) ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V
Drain-source Voltage (VGS = 0) 900 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc = 25 oC 3.5 3.5
I
D
Drain Current (continuous) at Tc = 100 oC 2.2 1.26(*) A
I
D
Drain Current (pulsed) 14 14 A
DM
Total Dissipation at Tc = 25 oC 100 35 W
tot
900 V
(**)
Derating Factor 0.8 0.28 W/
) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
1
Insulation Withstand Voltage (DC) 2000 V
ISO
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
(BR)DSS
, Tj ≤ T
(**) Limited only T
JMAX
JMAX
A
o
C
o
C
o
C
October 1998
1/6
STP3NB90/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Thermal Resistance Junction-case Max 1.25 3.57
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
62.5
0.5
300
3.5 A
233 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
900 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 1.7 A 4 4.2 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
3.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1.7 A 1.6 S
= 0 700
GS
90
7
µA
µA
pF
pF
pF
2/6
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