SGS Thomson Microelectronics STP3NB80FP, STP3NB80 Datasheet

STP3NB80



N - CHANNEL 800V - 4.6Ω - 2.6A- TO-220/TO-220FP

TYPE V

STP3NB80 STP3NB80 FP

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

800 V 800 V

= 4.6

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Ω

R

DS(on)

<6.5Ω <6.5

Ω

I

D

2.6 A

STP3NB80FP

PowerMESH MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGHSPEED SWITCHING

■ UNINTERRUPTIBLEPOWERSUPPLY(UPS)

■ DC-DC& DC-AC CONVERTERS FOR

TELECOM,INDUSTRIAL AND CONSUMER ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P3 NB80 STP 3NB 80FP

V

I

DM

P

dv/ dt(

V

T

(•) Pulsewidth limited by safe operating area (1)ISD≤ 2.6A, di/dt ≤ 200A/µs,VDD≤ V

••) Limited only by maximum temperature allowed

(

January 1999

Drain-source Voltage (VGS=0) 800 V

DS

Dra in- gate Volt age (RGS=20kΩ)

DGR

Gate -sourc e Volta ge ± 30 V

GS

Drain C urrent (co ntinuous) at Tc=25oC2.62.6(

I

D

Drain C urrent (co ntinuous) at Tc=100oC1.61.6(••) A

I

D

800 V

)A

••

(•) Dra in Cur rent (pu ls ed) 10.4 10.4 A

Total Dissipation at Tc=25oC9035W

tot

Der at in g Fac to r 0.72 0.28 W/

1) P eak Dio de Recovery volt age slope  4.5 V/ns

Insulat ion W ith stand Vo ltage (DC)  2000 V

ISO

St orage T e mperat ur e -65 t o 150

stg

Max. Op erating Junctio n T e m pe rat ure 150

T

j

,Tj≤T

(BR)DSS

JMA

o

C

o

C

o

C

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STP3NB80/FP

THERMAL DATA

TO-220 TO220-FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue Uni t

I

AR

E

Ther mal Resis t an ce Junc ti on-cas e Max 1.39 3.57 Ther mal Resis t an ce Junc ti on-ambien t Max

Thermal Resistance Case-sink Typ Maximum Lead Tem peratu re For Soldering Purp ose

l

Avalanche Cur rent, Repetit iv e or Not - Re petitiv e (pulse width limited by T

Single Pulse Avalanche En ergy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

2.6 A

176 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

800 V

Break d own V o lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Cu rr ent (V

GS

Gat e- b ody Le akage Current (V

DS

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250µA

345V

Voltage

R

DS(on)

Static Drain-source O n

VGS=10V ID= 1 .3 A 4.6 6.5 Ω

Resistanc e

I

D(on)

On S t ate Drain Cur rent VDS>I

D(on)xRDS(on)max

2.6 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansconduc tance

C

Input Cap ac i t an c e

iss

Out put Capacita nce

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1.3A 1 2 S

VDS=25V f=1MHz VGS=0 440

60

7

575

78

9

µ µA

pF pF pF

A

2/9

STP3NB80/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

d(on)

Q Q Q

Turn-on Time

t

Rise Time

r

Total Gate Charge

g

Gat e- Source Cha rge

gs

Gate-Drain Charge

gd

VDD= 400 V ID=1.3A

=4.7 Ω VGS=10V

R

G

VDD=640 V ID=3A VGS=10V 17

12 10

6.5

7.5

17 14

24 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

r(Voff)

t

Off -voltage Rise Time Fall Time

f

Cross-ov er Time

c

VDD= 640 V ID=3 A

=4.7 Ω VGS=10V

R

G

15 17 22

21 24 31

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea

Source-drain Curr ent

(•)

Source-drain Curr ent

2.6

10.4

(pulsed)

(∗) For ward O n V oltage ISD=2.6A VGS=0 1.6 V

Reverse Recov er y

rr

Time Reverse Recov er y

rr

=2.6A di/dt=100A/µs

I

SD

V

= 100 V Tj=150oC

DD

650

2.8 Charge Reverse Recov er y

8.5 Current

ns ns

nC nC

ns ns ns

A A

ns

µC

A

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9