SGS Thomson Microelectronics STP3NB60FP, STP3NB60 Datasheet
STP3NB60
STP3NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE V
STP3NB60
STP3NB60FP
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
DSS
600 V
600 V
=3.3 Ω
R
DS(on)
<3.6 Ω
<3.6Ω
I
D
3.3 A
2.2 A
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
ST P3 NB60 ST P3NB 60FP
V
V
V
I
DM
P
dv/dt(
V
T
March 1998
Drain-source V oltage (VGS=0) 600 V
DS
DGR Drain- gate Voltage ( R
Gat e- source Volt age ± 30 V
GS
I
Drain Current ( c on t in uous) a t Tc=25oC3.32.2A
D
Drain Current ( c on t in uous) a t Tc=100oC2.11.4A
I
D
=20kΩ)
GS
600 V
(•) Drain Cur rent (pulsed) 13.2 13.2 A
Tot al D iss ip at i on at Tc=25oC8035W
tot
Derat in g Factor 0.64 0.28 W/
1) Peak Diode Rec ov er y volt age slope 4.5 4.5 V/ns
Ins ulation W it hsta nd V oltage (DC) 2000 V
ISO
Sto rage Tempe rature -65 to 150
stg
T
Max. Operat in g J unctio n Te m peratu re 150
j
o
C
o
C
o
C
1/9
STP3NB60/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-c a se Max 1.56 3.57
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink T yp
Maximum Lea d T e mperat u re Fo r S oldering Purp os e
l
Avalanche Curre nt , Repet itive o r Not- Re petitive
(pulse width limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
62.5
0.5
300
3.3 A
100 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
600 V
Breakdown Voltage
I
DSS
I
GSS
Zer o G at e Volt age
Drain Cur rent (V
GS
Gat e-body Le akage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c D rain-source On
VGS=10V ID= 1.6 A 3.3 3.6 Ω
Resistance
I
D(on)
On St at e D rain Cu rr e nt VDS>I
D(on)xRDS(on)max
3.3 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capacit an c e
iss
Out put C apa c itance
oss
Reverse T rans fer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=1.6A 1.2 2 S
VDS=25V f=1MHz VGS= 0 400
57
7
520
77
9
µA
µA
pF
pF
pF
2/9
STP3NB60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
Turn-on T ime
r
Rise T ime
t
VDD=300V ID=1.6A
=4.7 Ω VGS=10V
R
G
11
7
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Charge
gs
Gate-Drain Charge
gd
VDD=480V ID=3.3A VGS=10V 15
6.2
5.6
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltage Rise T im e
Fall Time
f
Cross-ov er Tim e
c
VDD=480V ID=3.3A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
11
13
18
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward On V o lt age ISD=3.3A VGS=0 1.6 V
Reverse R ecovery
rr
Time
Reverse R ecovery
rr
= 3.3 A d i/ dt = 100 A /µs
I
SD
=100V Tj=150oC
V
DD
(see test circuit, figure 5)
500
2.1
Charge
Reverse R ecovery
8.5
Current
17
11
22 nC
16
18
25
3.3
13.2
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Areafor TO-220 Safe Operating Area for TO-220FP
3/9
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