SGS Thomson Microelectronics STP3NB100FP, STP3NB100 Datasheet
STP3NB100
STP3NB100FP
N - CHANNEL 1000V - 5.3
TYPE V
STP3NB10 0
STP3NB10 0FP
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
1000 V
1000 V
= 5.3
DESCRIPTION
Using the latest high voltageMESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
R
DS(on)
<6Ω
<6
Ω
I
D
3A
3A
Ω
Ω
- 3 A - TO-220/TO-220FP
PowerMESH MOSFET
TARGET DATA
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P3NB100 ST P3NB100FP
V
V
V
I
DM
P
dv/ dt(
V
T
(•) Pulse width limited by safe operating area (1)I
**) Limited only by T
(
October 1998
Drain-source Voltage (VGS=0) 1000 V
DS
Dra in- gate V oltage ( RGS=20kΩ)
DGR
Gate -sourc e Volta ge ± 30 V
GS
Drain C urrent (co ntinuous) at Tc=25oC 3 3(**) A
I
D
Drain C urrent (co ntinuous) at Tc=100oC1.91.1A
I
D
1000 V
(•) Dra in C urrent (pu lsed) 12 12 A
Total Dissipation at Tc=25oC 100 35 W
tot
Derating Factor 0.8 0.28 W/
1) P eak Diode Recovery voltage s lop e 4.5 4.5 V/ns
Insulat ion W ith stand Vo ltage (DC) 2000 V
ISO
St orage T e mperat ur e -65 t o 150
stg
Max. Opera t ing Junc t ion Te mperatu re 150
T
j
MAX
≤
3
Α,
≤
di/dt
SD
200 A/µs, V
≤
DD
V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/6
STP3NB100/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resis t an ce Junc ti on-cas e Max 1.25 3.57
Ther mal Resis t an ce Junc ti on-ambien t Max
Thermal Resistance Case-sink Typ
Maximum Lead T em peratu r e For Soldering Purp os e
l
Avalanche Current, Re petitive or Not -Re petitiv e
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
3A
244 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
1000 V
Break d own Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curr ent (V
GS
Gat e- b ody Leaka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
=± 30 V
V
GS
1
50
± 100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250µA
345V
Voltage
R
DS(on)
Static Drain-source O n
VGS=10V ID= 1 .5 A 5.3 6 Ω
Resistanc e
I
D(on)
On S t ate Drain Current VDS>I
D(on)xRDS(on)max
3A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Capacitan ce
iss
Out put Capacit ance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1.5 S
VDS=25V f=1MHz VGS=0 700
80
4
µ
µA
pF
pF
pF
A
2/6
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