SGS Thomson Microelectronics STP3NA50FI, STP3NA50 Datasheet
STP3NA50
STP3NA50FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STP 3NA50
STP 3NA50FI
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
DSS
500 V
500 V
= 2.4 Ω
R
DS(on)
<3Ω
<3Ω
I
D
3.3 A
2.3 A
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
and gate charge, unequalled
DS(on)
ruggedness and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST P3NA50 ST P3NA50FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 500 V
DS
Drain - gat e Voltage (RGS=20kΩ)500V
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc=25oC3.32.3A
I
D
Drain Current (continuous) at Tc=100oC2.1 1.5A
I
D
(•) Drain Current (pulsed) 13.2 13.2 A
Total Di ssipation a t Tc=25oC8040W
tot
Derat ing Factor 0.64 0.32 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 t o 150
stg
Max. Operating Jun ction T emperature 150
T
j
o
o
o
C
C
C
1/10
STP3NA50/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance J unction- c ase Max 1.56 3.12
Thermal Resistance Junc tion-am bie nt Max
Thermal Resistance Cas e-sink Typ
Maximum Lead Temperature For So ldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
62.5
0.5
300
3.3 A
55 mJ
2.2 mJ
2.1 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Te st Condition s Min. Typ. M ax. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 500 V
Break d own Volta ge
I
DSS
I
GSS
Zer o G at e V oltage
Drain Current (VGS=0)
Gat e- body Leakage
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC
= ± 30 V ± 10 0 nA
V
GS
25
250
ON (∗)
Symbol Parameter Te st Condition s Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n
VGS=10V ID= 1.5 A 2.4 3 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
3.3 A
VGS=10V
DYNAMIC
Symbol Parameter Te st Condition s Min. Typ. M ax. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1.2 2.2 S
VDS=25V f=1MHz VGS=0 370
62
20
485
81
27
µA
µA
pF
pF
pF
2/10
STP3NA50/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Te st Condition s Min. Typ. M ax. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T ime
t
Rise Time
r
Turn-on Current S lope VDD=400V ID=3A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Te st Condition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAINDIODE
VDD=250V ID=1.5A
RG=18 Ω VGS=10V
14
23
(see test circuit, figure 3)
340 A/µs
RG=18 Ω VGS=10V
(see test circuit, figure 5)
VDD= 400 V ID=3A VGS=10V 21
6
9
VDD=400V ID=3A
RG=18 Ω VGS=10V
(see test circuit, figure 5)
13
11
26
20
30
28 nC
18
16
35
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Te st Condition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain C urrent
(•)
Source-drain C urrent
3.3
13.2
(pulsed)
V
(∗) Forward On V oltage ISD=3.3A VGS=0 1.6 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=3A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
350
4.2
Charge
I
RRM
Reverse Recovery
24
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas for TO-220 Safe Operating Areas forISOWATT220
A
A
ns
µC
A
3/10
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