SGS Thomson Microelectronics STP3NA100FP, STP3NA100 Datasheet
STP3NA100
STP3NA100FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
■ TYPICALR
DS(on)
=4.3 Ω
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHE DATA AT 100
o
C
■ LOWINTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
APPLICATIONS
■ HIGH CURRENT, HIGHSPEEDSWITCHING
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTORDRIVE
INTERNAL SCHEMATIC DIAGRAM
February 1998
TO-220 TO-220FI
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
ST P3NA100 STP3N A100FI
V
DS
Drain-source Voltage (VGS= 0) 1000 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)
1000 V
V
GS
Gat e- source Voltage ± 30 V
I
D
Drain Current (continuous ) at Tc=25oC3.52.0A
I
D
Drain Current (continuous ) at Tc=100oC2.01.2A
I
DM
(•) Drain Current (pulsed ) 14 14 A
P
tot
Tot al Dissip at i on at Tc=25oC11045W
Derat in g F actor 0.88 0.36 W/
o
C
V
ISO
Ins ulation Withs t a nd Volt age (DC) 2000 V
T
stg
Sto rage Temperature -65 to 150
o
C
T
j
Max. Oper at in g Junc t io n Temper at ure 150
o
C
(•) Pulsewidth limitedby safe operating area
TYPE V
DSS
R
DS(on)
I
D
STP3NA100
ST P3NA100F I
1000 V
1000 V
<5 Ω
<5Ω
3.5 A
2A
1/9
THERMAL DATA
TO-220 IS O WATT 220
R
thj-case
Ther mal Resist ance Junction-c a s e Max 1.14 2.78
o
C/W
R
thj-amb
R
thc-sin k
T
l
Ther mal Resist ance Junction-ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lead T e mperature For Sold eri ng P ur p os e
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Va lue Uni t
I
AR
Avalanche Curre nt , Repet it ive or Not -Re petitive
(pulse width limited by T
j
max, δ <1%)
3.5 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
=25oC, ID=IAR,VDD=50V)
170 mJ
ELECTRICAL CHARACTERISTICS (T
case
=25oC unlessotherwise specified)
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
=250µAVGS=0
1000 V
I
DSS
Zer o Gate V o lt age
Drain Cur re nt (V
GS
=0)
V
DS
=MaxRating
V
DS
=MaxRating Tc=125oC
25
250
µA
µA
I
GSS
Gat e-body Leakage
Current (V
DS
=0)
V
GS
= ± 30 V
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
Voltage
V
DS=VGSID
=250µA
2.25 3 3.75 V
R
DS(on)
Stati c D rain-source On
Resistance
VGS=10V ID= 1.5 A 4.3 5 Ω
I
D(on)
On State Drain Cu r rent VDS>I
D(on)xRDS(on)max
VGS=10V
3.5 A
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1.5 3 S
C
iss
C
oss
C
rss
Input Capaci t an c e
Out put Capa c itance
Reverse Transfer
Capa cit an c e
VDS=25V f=1MHz VGS= 0 1100
85
20
1430
110
30
pF
pF
pF
STP3NA100/FI
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Tim e
VDD=500V ID=1.7A
R
G
=4.7 Ω VGS=10V
20
27
27
35
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e-Source Charge
Gate-Drain Charge
VDD=800V ID=3.5A VGS=10V 48
8
23
65 nC
nC
nC
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Of f - voltage Rise T im e
Fall Time
Cross-over Tim e
VDD=800V ID=3.5A
R
G
=47 Ω VGS=10V
(see test circuit, figure 5)
62
22
95
85
30
125
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
3.5
14
A
A
V
SD
(∗) For ward On Vo lt age ISD=3.5A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 3.5 A di/dt = 100 A/µs
V
DD
=100V Tj=150oC
(see circuit, figure 5)
1000
15
35
ns
µC
A
(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areafor TO-220 Safe Operating Area for TO-220FP
STP3NA100/FI
3/9
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