SGS Thomson Microelectronics STP38N06 Datasheet

STP38N06

N - CHANNEL ENHANCEMENT MODE

”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

PRELIMINARY DATA

TYPE V

DSS

STP38N06 60 V < 0.03 Ω 38 A (*)

R

DS(on)

I

D

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100% AVALANCHETESTED

■ REPETITIVEAVALANCHEDATAAT 100

■ HIGH CURRENTCAPABILITY

o

■ 175

■ HIGH dV/dt RUGGEDNESS

■ APPLICATIONORIENTED

COPERATINGTEMPERATURE

DS(on)

=0.026 Ω

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

■ POWERMOTOR CONTROL

■ DC-DC& DC-AC CONVERTERS

■ SYNCRONOUSRECTIFICATION

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

DGR

V

I

DM

P

dV/dt(

T

(•) Pulse width limited by safe operating area

March 1996

Drain-source Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V Gate-source Voltage ± 20 V

GS

I

Drain Current (c ont inuo us) a t Tc=25oC38A

D

I

Drain Current (c ont inuo us) a t Tc=100oC26A

D

(•) Drain Current (puls ed) 152 A

Total Dissipat i on at Tc=25oC90W

tot

Derat ing Factor 0.6 W/

1) Peak Diode Recovery voltage slope 7 V/ns

Stora ge Temperature -65 to 175

stg

T

Max. Operat ing Junct i on Temperatu re 175

j

o o

o

C

C C

1/11

STP38N06

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb o l Para met er Max V alue Uni t

I

AR

E

I

AR

Ther mal Resistance Junct ion-case Max Ther mal Resistance Junct ion-ambient Max Ther mal Resistance Case-s i nk Typ Maximum Lead Tempera t ure For Solder ing Purpo se

l

Avalanche Current , Repet it iv e or Not-Repe t it ive (pulse width limi t ed by T

Single Pu lse Avalanc he E nerg y

AS

(starti ng T Repetitive Avalanche Energy

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limi t ed by T

max, δ <1%)

j

max, δ <1%)

j

Avalanche Current , Repet it iv e or Not-Repe t it ive

=100oC, p ulse wid t h limited by Tjmax, δ <1%)

(T

c

1.66

62.5

0.5

300

38 A

300 mJ

75 mJ

26 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µAVGS=0 60 V

Break dow n Voltage

I

DSS

GSS

Zero Gate Voltage Drain Current (V

GS

Gat e- bod y Leaka ge Current (V

DS

=0)

=MaxRating

V

DS

V

=MaxRatingx0.8 Tc= 125oC

DS

V

= ± 20 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th )

R

DS(on)

I

D(on)

Gat e Thre shold Volt age VDS=VGSID=250µA234V St at ic Drain-source On

Resistance

VGS= 10V ID=19A

= 10V ID=19A Tc=100oC

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

0.026 0.03

0.06

38 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

Input Capac it an ce

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=19A 14 19 S

VDS=25V f=1MHz VGS= 0 2000

350

80

2800

450 120

Ω Ω

pF pF pF

2/11

STP38N06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time Rise Time

VDD=30V ID=19A

=50 Ω VGS=10V

R

G

(see test cir cuit, figure 3)

(di/dt)

Tur n-on C urr ent Slope VDD=48V ID=38A

on

R

=50 Ω VGS=10V

G

(see test cir cuit, figure 5)

Q

Tot al Gat e Charge

g

Gate-Source Charge

gs

Gat e- Drain Charge

gd

VDD=40V ID=38A VGS=10V 60

SWITCHINGOFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall T ime

f

Cross-over Time

c

VDD=48V ID=38A

=50 Ω VGS=10V

R

G

(see test cir cuit, figure 5)

SOURCE DRAIN DIODE

45

28065380

240 A/ µs

80 nC 10 20

65

140 230

85

180 300

ns ns

nC nC

ns ns ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

38

152

(pulsed)

(∗)ForwardOnVoltage ISD=38A VGS=0 1.5 V

V

SD

t

Q

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 38 A di/dt = 10 0 A/µs

=40V Tj= 150oC

V

DD

(see test cir cuit, figure 5)

85

0.3

Charge

I

RRM

Reverse Recovery

7

Current

(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 % (•) Pulse width limited by safe operating area (

1)I

≤ 20 A, di/dt≤ 300 A/µs, VDD≤ V

SD

(BR)DSS,Tj≤TJMAX

Safe Operating Area ThermalImpedance

A A

ns

µC

A

3/11

STP38N06

Derating Curve

TransferCharacteristics

OutputCharacteristics

Transconductance

StaticDrain-source On Resistance

4/11

Gate Charge vs Gate-source Voltage