SGS Thomson Microelectronics STP36NF03L Datasheet
STP36NF03L
N-CHANNEL 30V - 0.015
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
ST P36NF03L 30 V < 0. 02 Ω 36 A
■ TYPICALR
■ TYPICALQ
■ OPTIMAL R
■ CONDUCTIONLOSSESREDUCED
■ SWITCHINGLOSSESREDUCED
DS(on)
g
DSS
= 0.015 Ω
= 18 nC @ 10V
DS(on)xQg
DESCRIPTION
This applicationspecific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size” strip-based process. The resulting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboardswhere fast switching and high efficiencyare of paramount importance.
R
DS(on)
TRADE-OFF
I
D
Ω
- 36A TO-220
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
(•) Pulse width limited by safeoperating area
Dra in- sour c e Volt age (VGS=0) 30 V
DS
Dra in- gate V ol t age ( RGS=20kΩ)30V
DGR
Gat e-source Voltage
GS
I
Dra in C u rr ent (c ontinuous) a t Tc=25oC36A
D
I
Dra in C u rr ent (c ontinuous) a t Tc=100oC25A
D
(•) Drain Cu rrent (p ulsed) 144 A
Tot al Dissipation at Tc=25oC75W
tot
Der ati ng Fac t or 0.5 W/
St orage Temperature -65 t o 175
stg
T
Max. O perating Junction T emper at ure 175
j
20 V
±
o
C
o
C
o
C
January 2000
1/6
STP36NF03L
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Te m pe ra tur e For So lder ing Purpose
l
2
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n V o lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cur re nt ( V
GS
Gat e- bod y L eakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA12.5V
Sta t ic Drain -s ource On
Resistance
On State Drain Current VDS>I
VGS=10V ID=18A
V
=5V ID=9A
GS
D(on)xRDS(on)ma x
0.015
0.026
0.020
0.035
36 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capac i t ance
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)ma xID
=18 A 20 S
VDS=25V f=1MHz VGS= 0 750
270
60
µA
µ
Ω
Ω
pF
pF
pF
A
2/6
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