SGS Thomson Microelectronics STP36NE06FP, STP36NE06 Datasheet
STP36NE06
N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP
TYPE V
STP36NE06
STP36NE06FP
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
DSS
60 V
60 V
=0.032 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremelyhigh packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
R
DS(on)
<0.040Ω
<0.040Ω
o
C
I
D
36 A
20 A
STP36NE06FP
STripFET POWER MOSFET
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
STP 36NE06 STP36NE06 F P
V
V
V
I
DM
P
V
dv/ dt Peak Diode Re c overy voltage slope 7 V/ns
T
(•) Pulsewidth limitedby safe operatingarea (1)ISD≤ 36 A,di/dt ≤ 300 A/µs, VDD≤ V
July 1998
Drain-source Voltage (VGS=0) 60 V
DS
Drain- gate Voltage ( RGS=20kΩ)
DGR
Gat e- source Voltage ± 20 V
GS
I
Drain Current (cont in uous) at Tc=25oC3620A
D
I
Drain Current (cont in uous) at Tc=100oC2414A
D
60 V
(•) Drain Current (pulsed ) 144 144 A
Tot al Dissipat i on at Tc=25oC10035W
tot
Derat in g Factor 0.66 0.27 W/
Ins ulation Withst and Voltage (DC) 2000 V
ISO
Sto rage T emperat ure -65 to 17 5
stg
T
Max. Operat in g Junct io n Temper at u r e 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/9
STP36NE06FP
THERMAL DATA
TO - 2 20 TO-220FP
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Paramet e r Max Value Uni t
I
AR
E
Ther mal Resistan ce Junction-c a s e Max 1.51 4.28
Ther mal Resistan ce Junction-ambient Max
Ther mal Resistan ce Case - sink Ty p
Maximum Lead Te mperature For Soldering P urpose
l
Avalanche Curre nt, Repet it i v e or Not -Repetit ive
(pulse w idth limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
62.5
0.5
300
36 A
180 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Un it
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
60 V
Breakdown Volt age
I
DSS
I
GSS
Zer o Gate Volt age
Drain Curre nt (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125
V
DS
o
C
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Un it
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID=18A 0.032 0.04 Ω
Resistance
I
D(on)
On State Drain Cu rr e nt VDS>I
D(on)xRDS(on)max
36 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Un it
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capacit ance
iss
Out put Capa citance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=18 A 7 15 S
VDS=25V f=1MHz VGS= 0 2115
260
65
2800
350
90
µA
µA
pF
pF
pF
2/9
STP36NE06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Un it
t
d(on)
t
r
(di/dt)
Q
Q
gs
Q
gd
Turn-on Time
Rise Time
Turn-on Current Slope VDD=48V ID=36A
on
Total Gate Charge
g
VDD=30V ID=18A
=4.7Ω VGS=10V
R
G
=4.7 Ω VGS=10 V
R
G
VDD=48V ID=36A VGS=10V 50
Gat e-Sourc e Charge
Gate-Drain Charge
28
85
250 A/µ s
13
18
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Un it
t
r(Voff)
t
t
Of f - voltage Rise Time
Fall Time
f
Cross-over Tim e
c
VDD=48V ID=36A
=4.7 Ω VGS=10V
R
G
12
25
40
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Un it
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) Forward On Volt age ISD=36A VGS=0 1.5 V
Reverse Recover y
rr
Time
Reverse Recover y
rr
= 36 A di/dt = 10 0 A/µs
I
SD
=30V Tj=150oC
V
DD
75
245
Charge
Reverse Recover y
6.5
Current
40
115
70 nC
16
35
55
36
144
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Areafor TO-220 Safe Operating Area for TO-220FP
3/9
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