SGS Thomson Microelectronics STP36N05LFI, STP36N05L Datasheet
STP36N05L
STP36N05LFI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.033 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175
o
C OPERATING TEMPERATURE
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
1
2
3
TO-220 ISOWATT220
November 1996
TYPE V
DSS
R
DS(on)
I
D
STP 36N05L
STP 36N05LFI
50 V
50 V
<0.04Ω
<0.04Ω
36 A
21 A
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STP 36N05L ST P36N05LF I
V
DS
Drain - s ource Voltage (VGS=0) 50 V
V
DGR
Drain- gate Voltage (RGS=20kΩ)50V
V
GS
Gate-source Voltage ± 15 V
I
D
Drain Current (continuous) at Tc=25oC3621A
I
D
Drain Current (continuous) at Tc=100oC25 14A
I
DM
(•) Drain Current (pulsed) 144 144 A
P
tot
Total D i ssipation at Tc=25oC 120 40 W
Derat ing Factor 0.8 0.27 W/
o
C
V
ISO
Ins ulation Withs t and Voltage (DC) 20 00 V
T
stg
St or a ge Tem perature -65 to 175
o
C
T
j
Max. Operating Junctio n Temperatur e 175
o
C
(•) Pulsewidth limited bysafe operating area
1
2
3
1/10
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
Thermal Resistance Junction - cas e M ax 1.25 3.75
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
36 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng T
j
=25oC, ID=IAR,VDD=25V)
240 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
60 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
25 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS=0 50 V
I
DSS
Zer o Gate Voltage
Drain Current (VGS=0)
VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC
1
10
µA
µA
I
GSS
Gat e- body Leakage
Current (V
DS
=0)
V
GS
= ± 15 V ± 100 nA
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=5 V ID= 18 A 0.033 0.04 Ω
I
D(on)
On St ate Dra in Current VDS>I
D(on)xRDS(on)max
VGS=10V
36 A
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=18A 12 24 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS= 0 1350
450
130
1800
600
200
pF
pF
pF
STP36N05L/FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=25V ID=18A
RG=50 Ω VGS=5V
(see test circuit, figure 3)
90
550
130
800
ns
ns
(di/dt)
on
Turn-on C urrent Slope VDD=40V ID=36A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
85 A/ µ s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD=40V ID=36A VGS=5V 35
11
19
50 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=40V ID=36A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
110
180
310
160
260
450
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
V
SD
(∗) For w ar d On Volt age ISD=36A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 36 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)
100
0.27
5.5
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
STP36N05L/FI
3/10
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