SGS Thomson Microelectronics STP35NF10, STB35NF10 Datasheet
STP35NF10
STB35NF10
N-CHANNEL 100V - 0.030Ω -40ATO-220/D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE V
STP35NF10
STB35NF10
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
DS
DSS
100 V
100 V
(on) = 0.030Ω
R
DS(on)
< 0.035 Ω
< 0.035 Ω
I
D
40 A
40 A
CHARACTERIZATION
DESCRIPTION
This Power Mosfet series realized with STMicroelectronics uniqueSTripFET process hasspecifical ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTRO L
3
1
D2PAK
TO-220
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 13 V/ns
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
100 V
100 V
Gate- source Voltage ±20 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 160 A
Total Dissipation at TC= 25°C
40 A
28 A
115 W
Derating Factor 0.77 W/°C
(2)
Single Pulse Avalanche Energy 300 mJ
Storage Temperature
Operating Junction Temperature
(1) ISD≤35A, di/dt ≤300A/µs, VDD≤ V
(2) Starting Tj= 25°C, ID= 20A, VDD=80V
–55to175 °C
(BR)DSS,Tj≤TJMAX.
1/10April 2003
STP35NF10 - STB35NF1 0
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.30 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID= 250 µA, VGS= 0 100 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ±20V ±100 nA
GS
V
DS=VGS,ID
VGS=10V,ID= 17.5 A
= 250µA
234V
0.030 0.035 Ω
1µA
10 µA
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=17.5A 20 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 220 pF
Reverse Transfer
Capacitance
V
=25V,f=1MHz,VGS=0
DS
1550 pF
95 pF
2/10
STP35NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 60 ns
Total Gate Charge VDD=80V,ID=35A,VGS= 10V 55 nC
Gate-Source Charge 12 nC
Gate-Drain Charge 20 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 40 A
(2)
Source-drain Current (pulsed) 160 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=50V,ID= 17.5 A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
VDD= 50V, ID=17.5A,
R
=4.7Ω, VGS= 10V
G
(see test circuit, Figure 3)
ISD=35A,VGS=0
= 35 A, di/dt = 100A/µs,
I
SD
V
=25V,Tj= 150°C
DD
(see test circuit, Figure 5)
17 ns
60
15
1.5 V
160
720
9
ns
ns
ns
nC
A
Thermal ImpedenceSafe Operating Area
3/10
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