SGS Thomson Microelectronics STP30NE06L, STP30NE06LFP Datasheet
STP30NE06L
STP30NE06LFP
N - CHANNEL 60V - 0.035 Ω - 30A - TO-220/TO-220FP
STripFET POWER MOSFET
TYPE V
ST P30NE06L
ST P30NE06LFP
■ TYPICALR
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE
■ APPLICATIONORIENTED
DS(on)
DSS
60 V
60 V
= 0.035 Ω
CHARACTERIZATION
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-ACCONVERTERS
■ SYNCHRONOUSRECTIFICATION
R
DS(on)
<0.05Ω
<0.05Ω
I
D
30 A
17 A
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP30NE06L STP30NE06L FP
V
V
V
I
DM
P
V
T
(•) Pulse width limited by safe operating area
March 1999
Drain-source Voltage (VGS=0) 60 V
DS
Drain- ga t e Voltage (RGS=20kΩ)60V
DGR
Gate-s ource Volt age ± 20 V
GS
I
Drain Cur rent (cont i nuous) at Tc=25oC3017A
D
I
Drain Cur rent (cont i nuous) at Tc= 100oC2112A
D
(•) Drain Cur rent (pulse d) 120 68 A
Total Dissipation at Tc=25oC8030W
tot
Derat i ng Factor 0.53 0.2 W/
Ins ula t ion Withst and Voltage (DC) 2000 V
ISO
St orage Tem p er at u re -65 to 175
stg
T
Max. Operating Junct ion Temperature 175
j
o
C
o
C
o
C
1/9
STP30NE06L/FP
THERMAL DATA
TO-220 TO-220FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max 1.875 5
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Temperature F or Solder ing P urp os e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
20 A
100 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250µA 1 1.75 2.5 V
Sta t ic Drain-s our c e On
Resistance
VGS=5V ID=15A
=10V ID=15A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.045
0.035
30 A
0.06
0.05
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac it anc e
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=15 A 10 18 S
VDS=25V f=1MHz VGS= 0 1350
195
58
µA
µA
Ω
Ω
pF
pF
pF
2/9
STP30NE06L/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(on)
Tur n-on Delay Time
Rise Time
t
r
VDD=30V ID=15A
R
=4.7
G
Ω
VGS=4.5V
25
105
(Resis t iv e Load, see fig. 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=48V ID=30A VGS=5V 20
8
10
28 nC
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(off)
Tur n-of f Dela y Tim e
t
Fall T ime
f
VDD=30V ID=15A
=4.7 Ω VGS=4.5V
R
G
50
20
(Resis t iv e Load, see fig. 3)
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=48V ID=30A
=4.7 Ω VGS=4.5V
R
G
(Indu ct iv e Load, see fig . 5)
15
40
60
SOURCEDRAIN DIODE
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
30
120
(pulsed)
(∗)ForwardOnVoltage ISD=30A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 30 A di/dt = 100 A /µs
=30V Tj=150oC
V
DD
(see test circuit, fig. 5)
80
0.18
Charge
Reverse Recovery
4.5
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
SafeOperating Area for TO-220 SafeOperating Area for TO-220FP
3/9
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