SGS Thomson Microelectronics STP30NE06FP, STP30NE06 Datasheet
STP30NE06
N - CHANNEL 60V - 0.042
TYPE V
ST P30NE06
ST P30NE06FP
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100%AVALANCHETESTED
o
■ 175
■ HIGHdV/dt CAPABILITY
■ APPLICATIONORIENTED
C OPERATINGTEMPERATURE
DS(on)
DSS
60 V
60 V
= 0.042
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature Size”
processwhereby a single body is implantedon a
strip layout structure. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
R
DS(on)
<0.050Ω
<0.050
Ω
Ω
I
D
30 A
17 A
STP30NE06FP
Ω
- 30A - TO-220/TO-220FP
STripFET POWER MOSFET
PRELIMINARY DATA
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUSRECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P30NE06 STP30 NE 0 6F P
V
V
V
I
DM
P
V
dV/d t Peak Diode Recov er y voltage sl ope 7 V/ns
T
(•) Pulse width limited by safeoperating area (1)I
’
January 1999
Dra in- sour c e V ol t age (VGS=0) 60 V
DS
Dra in- gate Voltage (RGS=20kΩ)
DGR
Gat e-source Volt age ± 20 V
GS
Dra in Curr ent (continuous) at Tc=25oC3017A
I
D
Dra in Curr ent (continuous) at Tc=100oC2112A
I
D
60 V
(•) Dra in Curr ent (pulsed) 120 68 A
Tot al Dis s ipation at Tc=25oC8030W
tot
Der ati ng F actor 0.53 0.2 W/
Insulation Withstand Voltage (DC) 2000 V
ISO
St orage Temperature -65 to 175
stg
Max. Oper at ing Junc t ion Temperature 175
T
j
≤
30 A, di/dt≤300A/µs, V
SD
DD
≤
V
(BR)DSS,Tj
≤
T
JMAX
o
C
o
C
o
C
1/6
STP30NE06/FP
THERMAL DATA
TO-220 TO-220FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value U ni t
I
AR
E
Ther mal Resistanc e Junct ion-case Max 1.87 5
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperat ure F or Soldering Purpos e
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Puls e Avalanche E nergy
AS
(starting T
=25oC, ID=IAR,VDD=30V)
j
max)
j
62.5
0.5
300
30 A
100 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
60 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
=± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Sta t ic Drain-source On
V
DS=VGSID
= 250µA
VGS=10V ID= 15 A 0.042 0.050 Ω
234V
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
30 A
VGS=10V
DYNAMIC
Symbol Parameter Test Con ditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacit anc e
iss
Out put Capacit ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=15 A 7 13 S
VDS=25V f=1MHz VGS= 0 1450
200
45
µ
µA
pF
pF
pF
A
2/6
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