SGS Thomson Microelectronics STP2NC70ZFP, STP2NC70Z, STD1NC70Z-1, STD1NC70Z Datasheet
STP2NC70Z , STP 2NC70 Z FP
STD1NC70Z, STD1NC70Z-1
N-CH A NNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK
Zener-Protected PowerMESH™III MOSFET
TYPE V
STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1
■ TYPICAL R
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPAC ITANCES
700 V
700 V
700 V
700 V
(on) = 7.3 Ω
DS
DSS
R
DS(on)
< 8.5 Ω
< 8.5 Ω
< 8.5 Ω
< 8.5 Ω
I
D
1.4 A
1.4 A
1.4 A
1.4 A
Pw
50 W
25 W
45 W
45 W
DESCRIPTION
The third generation of MESH O VERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications..
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
TO-220
IPAK
3
2
1
TO-220FP
3
2
1
DPAK
3
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP2NC70Z P2NC70Z TO-220 TUBE
STP2NC70ZFP P2NC70ZFP TO-220FP TUBE
STD1NC70ZT4 D1NC70Z DPAK TAPE & REEL
STD1NC70Z-1 D1NC70Z IPAK TUBE
1/13February 2002
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP2NC70Z STP2NC70ZFP
V
I
V
V
DM
P
DS
DGR
GS
I
D
I
D
TOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
700 V
700 V
Gate- source Voltage ± 25 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed) 5.6 5.6 (*) 5.6 A
Total Dissipation at TC = 25°C
1.4 1.4 (*) 1.4 A
0.9 0.9 (*) 0.9 A
50 25 45 W
Derating Factor 0.4 0.2 0.36 W/°C
I
GS
V
ESD(G-S)
Gate-source Current (DC) ± 50 mA
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2000 V
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
j
T
stg
(l) Pulse wi dth limited by safe operating area
(1) I
≤10A, di/dt ≤200A/µs, VDD ≤ V
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature
Storage Temperature
, Tj ≤ T
(BR)DSS
JMAX.
-65 to 150
-65 to 150
STD1NC70Z
STD1NC70Z-1
°C
°C
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 2.5 5 2.75 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max (for SMD) (#) 100 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
DPAK
IPAK
275
°C
AVALANCHE CHARACTERISTICS
Symbol Par amet er Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
1.4 A
60 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 25 V
Voltage
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3
Note : 3 . ∆V
(#) When mounted on minimum Footprint
= αT (25°-T) BV
BV
GSO
(25°)
10
-4
/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
2/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS = 15 V, ID= 0.7 A 1.2 S
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
g
Gate-Source Charge
Gate-Drain Charge
ID = 250 µA, VGS = 0 700 V
V
= Max Rating
DS
VDS = Max Rating, TC = 125 °C
V
= ± 20V ±10 µA
GS
V
= VGS, ID = 250µA
DS
345V
1
50
VGS = 10V, ID = 0.7 A 7.3 8.5 Ω
= 25V, f = 1 MHz, VGS = 0 305
V
DS
34
3.6
VGS = 0V, VDS = 0V to 560V 28 pF
VDD = 350 V, ID = 0.8 A
RG= 4.7Ω VGS = 10 V
11
8
(Resistive Load see, Figure 3)
= 560V, ID = 1.6 A,
V
DD
VGS = 10V
8
2
12
3.8
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD = 350 V, ID = 0.8 A
RG=4.7Ω VGS = 10 V
27
30
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
= 560V, ID = 1.6 A,
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
V
DD
RG=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
20
5
25
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c ycle 1.5 %.
2. Pulse width li mited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
ISD = 1.4 A, VGS = 0
ISD = 1.6 A, di/dt = 100A/µs
V
DD
(see test circuit, Figure 5)
= 30V, Tj = 150°C
370
1.3
6.8
when VDS increase s fr om 0 to 80%
oss
1.4
5.6
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/13
STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1
Safe Operating Area For TO-220 Thermal Impedance For TO-220
Safe Operating Area For TO-220FP
Safe Operating Area For DPAK/IPAK Thermal Impedance For DPAK/IPAK
Thermal Impedance For TO-220FP
4/13
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