SGS Thomson Microelectronics STP2NA50FI, STP2NA50 Datasheet
STP2NA50
STP2NA50FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V
STP2NA50
STP2NA50FI
■ TYPICALR
■ ± 30V GATE TO SOURCE VOLTAGERATING
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHEDATAAT 100
■ LOW INTRINSIC CAPACITANCES
■ GATECHARGEMINIMIZED
■ REDUCEDTHRESHOLD VOLTAGESPREAD
DS(on)
DSS
500 V
500 V
=3.25 Ω
R
DS(on)
<4Ω
<
4 Ω
I
D
2.8 A
2A
o
C
APPLICATIONS
■ MEDIUMCURRENT, HIGHSPEED
SWITCHING
■ SWITCHMODE POWER SUPPLIES (SMPS)
■ CONSUMERAND INDUSTRIALLIGHTING
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
ST P2 NA50 ST P2NA 50FI
V
V
DGR
V
I
DM
P
V
T
(•)Pulse width limited by safe operating area
March 1996
Drain-So urce Vol ta ge (Vgs= 0 ) 500 V
DS
Drain-G at e Voltage (Rgs=20KΩ) 500 V
Gate-Source Voltage ± 30 V
GS
Drain-Cur rent (cont i nuous ) a t Tc=25oC2.82A
I
D
Drain-Cur rent (cont i nuous ) a t Tc=100oC1.81.25A
I
D
(•) Drain-Current (Pulsed) 11.2 11.2 A
Tot al Dissipati on at Tc=25oC7535W
tot
Derat ing Factor 0.6 0.28 W/
Ins ulat ion Withstand Vo lt age (DC) - 4000 V
ISO
Stora ge Tem pe ra ture -65 to 150
stg
Max Operating J unction Temperature 150
T
j
o
C
o
C
o
C
1/6
STP2NA50/FI
THERMAL DATA
TO 220 ISOWATT220
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Val ue Uni t
I
AR
E
E
I
AR
Ther mal Resistance Junctio n-c ase Max 1.67 3.57
Ther mal Resistance Junctio n-am bien t Max
Ther mal Resistance Ca s e-s i nk Typ
Maximum Lead Temper ature For Solder in g P ur pose
l
Avalanche Current, Repetitiv e or Not-Repe t it ive
(pulse width lim i t ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
Repetitive Av alanche Energy
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width lim i t ed by T
max, δ <1%)
j
max, δ <1%)
j
Avalanche Current, Repetitiv e or Not-Repe t it ive
=100oC, p ulse width lim it ed by Tjmax, δ <1%)
(T
c
62.5
0.5
300
2.8 A
42 mJ
1.6 mJ
1.8 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
V
(BR)DSS
Drain-source
ID= 250 µAV
= 0 500 V
GS
Break dow n Voltage
I
I
DSS
GSS
Zero Gate Voltage
Drain Current (V
GS
=0)
Gat e- Source Leakage
Current (V
DS
=0)
=MaxRating
V
DS
V
=MaxRatingx0.8 Tc= 125oC
DS
V
= ± 30 V 100 mA
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thre shold Volt age VDS=V
St at ic Drain-source On
Resistance
VGS=10V ID=1.4A
=10V ID=1.4A Tc= 100oC
V
GS
On State Drain Current VDS>I
GS ID
D(on)xRDS(on)max
= 250 µA2.2533.75V
3.25 4
8
2.8 A
VGS=10 V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Ma x. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=1.4A 0.8 2 S
VDS=25V f=1MHz VGS= 0 300
55
15
400
70
20
Ω
Ω
pF
pF
pF
2/6
Loading...