SGS Thomson Microelectronics STP2N80, STP2N80FI Datasheet
STP2N80
STP2N80FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
STP 2N80
STP 2N80FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INPUT CAPACITANCE
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
DS(on)
DSS
800 V
800 V
=5Ω
R
DS(on)
<7Ω
<7Ω
I
D
2.4 A
1.5 A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
3
2
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STP2N80 STP2N80FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
December 1996
Drain - s ource Voltage (VGS=0) 800 V
DS
Drain- gate Voltage (RGS=20kΩ)800V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC2.41.5A
I
D
Drain Current (continuous) at Tc=100oC 1.5 0.95 A
I
D
(•) Drain Current (pulsed) 9.6 9.6 A
Total D i ssipation at Tc=25oC9035W
tot
Derat ing Factor 0.72 0.28 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 to 150
stg
Max. Operating Junctio n Temperatur e 150
T
j
o
o
o
C
C
C
1/10
STP2N80/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Res istance Junction -c as e M ax 1.38 3.57
Thermal Resis tance Junction- ambient Max
Thermal Res istance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose
l
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
62.5
0.5
300
2.4 A
85 mJ
3mJ
1.5 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 800 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Voltage
Drain Current (VGS=0)
Gat e- body Leakage
Current (V
DS
=0)
VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC
= ± 20 V ± 100 nA
V
GS
25
250
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold V oltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
VGS=10V ID=1A 5 7 Ω
Resistance
I
D(on)
On St ate Dra in Current VDS>I
D(on)xRDS(on)max
2.4 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1A 1.2 1.9 S
VDS=25V f=1MHz VGS=0 460
55
22
600
70
30
µA
µA
pF
pF
pF
2/10
STP2N80/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Turn-on C urrent Slope VDD=640V ID=2A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Condition s Mi n. Ty p. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=400V ID=1.5A
RG=50 Ω VGS=10V
38
42
(see test circuit, figure 3)
160 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 640 V ID=2A VGS=10V 31
6
14
VDD=640V ID=2A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
70
25
108
50
57
40 nC
90
32
140
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Condition s Mi n. Ty p. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
2.4
9.6
(pulsed)
V
(∗) For w ar d On Volt age ISD=2.4A VGS=0 2 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=2A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
920
18.4
Charge
I
RRM
Reverse Recovery
40
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
A
A
ns
µC
A
3/10
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