SGS Thomson Microelectronics STP22NM50FP, STP22NM50, STB22NM50-1, STB22NM50 Datasheet
STP22NM50 - STP22NM50FP
STB22NM50 - STB22NM50-1
N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK
MDmesh™Power M OSF ET
ADVANCED DATA
TYPE V
STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1
■ TYPICAL R
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUTCAPACITANCE AND GA TE CHARGE
■ LOW GATE INPUT RESISTANCE
DSS
500 V
500 V
500 V
500 V
(on) = 0.16Ω
DS
R
DS(on)Rds(on)*Qg
<0.215Ω
<0.215Ω
<0.215Ω
<0.215Ω
6.4 Ω*nC
6.4 Ω*nC
6.4 Ω*nC
6.4 Ω*nC
I
D
20 A
20 A
20 A
20 A
DESCRIPTION
The M Dmesh™ is a new revolutionary MOSFET technology that associates the M ultiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-res istance, impressively high dv/dt and excellent av alanche
characteristics. The adoption of the Company’s proprietary s trip technique yields overall dynamic performance that is significantly better than that of similar
competition’s products.
APPLICATIONS
The MDmesh™ f amily is very suitable for increasi ng
power dens ity of high voltage converters allowing system miniaturization and higher efficiencies.
3
1
D2PAK
TO-220
2
1
I²PAK
(Tabless TO-220)
I
NTERNAL SCHEMATIC DIAGRAM
3
1
TO-220FP
3
2
ABSOLUTE M AX IMUM RATINGS
Symbol Parameter Value Unit
STP(B)22NM50(-1) STP22NM50FP
V
DS
V
DGR
V
GS
I
D
I
D
IDM(●)
P
TOT
dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns
V
ISO
T
stg
T
j
(•)Pulse width limited by safe operating area
January 2003
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
500 V
500 V
Gate- source Voltage ±30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
20 20(*) A
12.6 12.6(*) A
Drain Current (pulsed) 80 80(*) A
Total Dissipation at TC= 25°C
192 45 W
Derating Factor 1.2 0.36 W/°C
Insulation Winthstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD≤20A, di/dt ≤400A/µs, VDD≤ V
(*)Limited only by maximum temperature allowed
(BR)DSS,Tj≤TJMAX.
1/10
STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1
THERMAL DATA
TO-220/I2PAK/
2
PAK
D
Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID= 5 A, VDD=50V)
j
TO-220FP
10 A
650 mJ
ELECTRICAL CHARACT E RISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 500 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ±30V ±100 nA
GS
10 µA
1µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 10A 0.16 0.215 Ω
= 250µA
345V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 285 pF
Reverse Transfer
Capacitance
C
(2) Equivalent Output
oss eq.
Capacitance
R
g
1. Pulsed: Pulse duration= 300 µs, duty cycle 1.5%.
2. C
Gate Input Resistance f=1 MHz Gate DC Bias=0
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
V
.
DSS
D(on)xRDS(on)max,
ID= 10A
V
=25V,f=1MHz,VGS=0
DS
VGS=0V,VDS= 0V to 400V 130 pF
Test Signal Level=20mV
Open Drain
oss
10 S
1480 pF
34 pF
1.6 Ω
when VDSincreases from 0 to 80%
2/10
STP22NM50 / STP22NM50FP / S TB22NM 50 / STB22NM50-1
ELECTRICAL CHARACT E RISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 16 ns
Total Gate Charge
Gate-Source Charge 13 nC
Gate-Drain Charge 19 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time 8.5 ns
Cross-over Time 23 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 20 A
(2)
Source-drain Current (pulsed) 80 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=250V,ID=10A
DD
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
V
=400V,ID=20A,
DD
V
=10V
GS
V
= 400 V, ID=20A,
DD
=4.7Ω, VGS=10V
R
G
(see test circuit, Figure 5)
ISD=20A,VGS=0
= 20 A, di/dt = 100A/µs,
I
SD
V
=100V,Tj=25°C
DD
(see test circuit, Figure 5)
= 20 A, di/dt = 100A/µs,
I
SD
VDD=100V,Tj=150°C
(see test circuit, Figure 5)
24 ns
40 56 nC
9ns
1.5 V
350
4.6
26
435
5.9
27
ns
µC
A
ns
µC
A
3/10
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