SGS Thomson Microelectronics STP22NF03L Datasheet
STP22NF03L
N-CHANNEL 30V - 0.038Ω - 22A TO -220
STripFET™ POWER MOSFET
TYPE V
DSS
STP22NF03L 30V <0.05
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ LOW GATE CHARGE AT 100°C
■ APPLICATION ORIENTED CHARACTERIZATION
(on) = 0.038Ω
DS
R
DS(on)
I
D
Ω
22A
DESCRIPTION
This Power Mosfet is the latest development of S TMicroelectronics unique “Single Feat ure Size
™” strip-
based process. The resulting transistor shows extremely high packing density for low on-resistance,
rugged avalance characteristics and less critical alignment steps therefore a remarkable manuf acturing reproducibility.
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ±15 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 88 A
Total Dissipation at TC = 25°C
22 A
16 A
45 W
Derating Factor 0.3 W/°C
(2)
Single Pulse Avalanche Energy 200 mJ
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) ISD ≤10A, di/dt ≤300A/µs, VDD ≤ V
(2) Starting Tj=25°C, ID=11A, VDD=15V
(BR)DSS
, Tj ≤ T
JMAX.
1/8Aug 2000
STP22NF03L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
= 250 µA, VGS = 0
I
D
= Max Rating
V
DS
V
= Max Rating, TC = 125 °C
DS
= ±20V
V
GS
V
= VGS, ID = 250µA
DS
= 10V, ID = 11 A
V
GS
VGS = 5 V, ID = 11 A
V
> I
D(on)
x R
DS(on)max,
DS
VGS=10V
30 V
1µA
10 µA
±100 nA
1V
0.038 0.05
0.045 0.06
22 A
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
> I
(1)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 90 pF
Reverse Transfer
Capacitance
D(on)
x R
DS(on)max,
V
DS
ID=1 1A
VDS = 25V, f = 1 MHz, VGS = 0
7S
330 pF
40 pF
2/8
STP22NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 100 ns
Total Gate Charge
Gate-Source Charge 3.6 nC
Gate-Drain Charge 2 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
r(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time 22 ns
Off-voltage Rise Time
Fall Time (see test circuit, Figure 5) 55 ns
Cross-over Time 75 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 22 A
(1)
Source-drain Current (pulsed) 88 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 18 nC
Reverse Recovery Current 1.2 A
Safe Operating Area Ther m al Imp e dence
= 15V, ID = 11A
DD
R
= 4.7Ω VGS = 4.5V
G
(see test circuit, Figure 3)
V
= 24V, ID = 22A,
DD
VGS = 10V
VDD = 15V, ID = 11A,
RG=4.7Ω, V
GS
= 4.5V
(see test circuit, Figure 3)
Vclamp =24V, I
R
=4.7Ω, V
G
GS
=22A
D
= 4.5V
ISD = 22A, VGS = 0
ISD = 22A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
11 ns
6.5 9 nC
25 ns
22 ns
1.5 V
30 ns
3/8
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