SGS Thomson Microelectronics STP21N06LFI, STP21N06L Datasheet
STP21N06L
STP21N06LFI
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE V
STP 21N06L
STP 21N06LFI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
■ 175
■ APPLICATION ORIENTED
o
C OPERATING TEMPERATURE
DS(on)
DSS
60 V
60 V
= 0.065 Ω
R
DS(on)
< 0. 085 Ω
< 0. 085 Ω
I
D
21 A
14 A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STP 21N06L ST P21N06LF I
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
July 1993
Drain - s ource Voltage (VGS=0) 60 V
DS
Drain- gate Voltage (RGS=20kΩ)60V
DGR
Gate-source Voltage ± 15 V
GS
Drain Current (continuous) at Tc=25oC2114A
I
D
Drain Current (continuous) at Tc=100oC14 9A
I
D
(•) Drain Current (pulsed) 84 84 A
Total D i ssipation at Tc=25oC8035W
tot
Derat ing Factor 0.53 0.23 W/
Ins ulation Withs t and Voltage (DC) 2000 V
ISO
St or a ge Tem perature -65 to 175
stg
Max. Operating Junctio n Temperatur e 175
T
j
o
o
o
C
C
C
1/10
STP21N06L/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e M ax 1.88 4.29
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose
l
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=25V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
62.5
0.5
300
21 A
80 mJ
20 mJ
14 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS=0 60 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Voltage
Drain Current (VGS=0)
Gat e- body Leakage
Current (V
DS
=0)
VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC
= ± 15 V ± 100 nA
V
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n
Resistance
On St ate Dra in Current VDS>I
VGS=5V ID= 10. 5 A
VGS=5V ID=10.5A Tc=100oC
D(on)xRDS(on)max
0.065 0.085
0.17
21 A
VGS=10V
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
= 10.5 A 6 15 S
VDS=25V f=1MHz VGS=0 700
250
70
1000
350
100
Ω
Ω
pF
pF
pF
2/10
STP21N06L/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Turn-on C urrent Slope VDD=40V ID=21A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=30V ID=10.5A
RG=50 Ω VGS=5V
65
37095530
(see test circuit, figure 3)
130 A/µs
RG=50 Ω VGS=5V
(see test circuit, figure 5)
VDD=40V ID=21A VGS=5V 18
6
10
VDD=40V ID=21A
RG=50 Ω VGS=5V
(see test circuit, figure 5)
70
100
180
26 nC
100
150
260
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
21
84
(pulsed)
V
(∗) For w ar d On Volt age ISD=21A VGS=0 1.6 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD= 21 A di/dt = 100 A/µs
VDD=30V Tj=150oC
(see test circuit, figure 5)
65
0.13
Charge
I
RRM
Reverse Recovery
4
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas Safe Operating Areas
A
A
ns
µC
A
3/10
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