SGS Thomson Microelectronics STP20NM50FP, STP20NM50, STB20NM50-1, STB20NM50 Datasheet

STP20NM50 - STP20NM50FP

STB20NM50 - STB20NM50-1

N-CH A NNEL 500V - 0. 20Ω - 20A TO-220/FP/D2PAK/I2PAK

MDmesh™Power MOSFET

TYPE V

STP20NM50 /FP
STB20NM50
STB20NM50 -1

■ TYPICAL R

■ HIGH dv/dt AND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESIST ANC E

■ TIGHT PROCESS CONTROL AND HIGH

DS

DSS

500V
500V
500V

(on) = 0.20Ω

R

DS(on)

<0.25Ω
<0.25Ω
<0.25Ω

I

D

20 A
20 A
20 A

MANUFACTURING YIELDS

DESCRIPTION

The MDmesh™

is a new revolutionary MOSFET tech-

nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis­tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri­etary strip technique yields overall dynamic perfor­mance that is significantly bett er than that of similar
com petition’ s prod uct s.

APPLICATIONS

The MDm esh™ family is ve ry suitable for incr easing
power density of high voltage converters allowing sys­tem miniaturization and higher efficiencies.

3

1

D2PAK

TO-220

2

1

I²PAK

(Tabless TO-220)

I

NTERNAL SCHEMATIC DIAGRAM

3

1

TO-220FP

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)20NM50(-1) STP20NM50FP

V

DS

V

DGR

V

GS

I

D

I

D

IDM (●)

P

TOT

dv/dt(1) Peak Diode Recovery voltage slope 15 V/ns

V

ISO

T

stg

T

j

(•)Pu l se width limited by safe oper ating area

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

500 V
500 V

Gate- source Voltage ±30 V

Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

20 20(*) A

12.6 12.6(*) A
Drain Current (pulsed) 80 80(*) A
Total Dissipation at TC = 25°C

192 45 W

Derating Factor 1.2 0.36 W/°C

Insulation Winthstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

(1)ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V
(*)Limit ed only by maxi m um temperatur e al l owed

(BR)DSS

, Tj ≤ T

JMAX.

1/12August 2002

STP20NM50/FP/STB20NM50/ST B 20NM50-1

THERMA L D ATA

TO-220/I²PAK/

D²PAK

Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose 300 °C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID = 5 A, VDD = 50 V)

j

TO-220FP

10 A

650 mJ

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID = 250 µA, VGS = 0 500 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating, TC = 125 °C

DS

V

= ±30V ±100 nA

GS

1µA

10 µA

ON

I

I

GSS

(1)

DSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS, ID = 250µA

DS

345V

VGS = 10V, ID = 10A 0.20 0.25 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (1) Forward Transconductance VDS > I

ID= 10A

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance 285 pF
Reverse Transfer

Capacitance

C

(2) Equivalent Output

oss eq.

VGS = 0V, VDS = 0V to 400V 130 pF

Capacitance

R

g

Gate Input Resistance f=1 MHz Gate DC Bias=0

Test Signal Level=20mV
Open Drain

1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.

2. C

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

V

DS

D(on)

x R

DS(on)max,

= 25V, f = 1 MHz, VGS = 0

10 S

1480 pF

34 pF

1.6 Ω

when VDS increase s fr om 0 to 80%

oss

2/12

STP20NM50/FP/STB20NM50/ST B 20NM50-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 16 ns
Total Gate Charge

Gate-Source Charge 13 nC
Gate-Drain Charge 19 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

f

t

c

Off-voltage Rise Time
Fall Time 8.5 ns
Cross-over Time 23 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.

2. Pulse width l i m i ted by safe operating area .

Source-drain Current 20 A

(2)

Source-drain Current (pulsed) 80 A
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

= 250 V, ID = 10 A

DD

RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)

V

= 400 V, ID = 20 A,

DD

VGS = 10 V

V

= 400 V, ID = 20 A,

DD

RG=4.7Ω, V

GS

= 10 V

(see test circuit, Figure 5)

ISD = 20 A, VGS = 0

= 20 A, di/dt = 100A/µs,

I

SD

VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)

= 20 A, di/dt = 100A/µs,

I

SD

V

= 100 V, Tj = 150°C

DD

(see test circuit, Figure 5)

24 ns

40 56 nC

9ns

1.5 V

350

4.6
26

435

5.9
27

ns

µC

A

ns

µC

A

Safe Operating Area For TO-220FPSafe Operating Area For TO-220 / I²PAK / D²PAK

3/12

STP20NM50/FP/STB20NM50/ST B 20NM50-1

Thermal Impedance For TO-220 / I²PAK / D²PAK Thermal Impedance For TO-220FP

Transfer CharacteristicsOutput Characteristics

Transconductance

4/12

Static Drain-source On Resistance