SGS Thomson Microelectronics STP20N10FI, STP20N10 Datasheet
STP20N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 0.09 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ 175
o
C OPERATING TEMPERATURE
■ APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STP 20N10 100 V < 0.12 Ω 20 A
1
2
3
TO-220
December 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
DS
Drain - s ource Voltage (VGS= 0) 100 V
V
DGR
Drain- gate Voltage (RGS=20kΩ) 100 V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at Tc=25oC20A
I
D
Drain Current (continuous) at Tc=100oC14A
I
DM
(•) Drain Current (pulsed) 80 A
P
tot
Total Di ssipation at Tc=25oC 105 W
Derat ing Factor 0.7 W/
o
C
T
stg
St or a ge Tem perature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
(•) Pulsewidth limited bysafe operating area
1/9
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
l
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
1.43
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
20 A
E
AS
Single Pul se Avalanche Ener gy
(starti ng Tj=25oC, ID=IAR,VDD=25V)
60 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
15 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
14 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwise specified)
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS= 0 100 V
I
DSS
Zer o Gate Volt age
Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
= Max Rating x 0 .8 Tc=125oC
1
10
µA
µA
I
GSS
Gat e- body Leak age
Current (VDS=0)
VGS= ± 20 V ± 100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA22.94V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=10V ID= 10 A 0.09 0.12 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
20 A
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=10A 7 12 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS=0 800
200
40
1100
300
60
pF
pF
pF
STP20N10
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on T im e
Rise Time
VDD=30V ID=3A
RG=50 Ω VGS=10V
(see test circuit, figure 3)
25
75
35
110
ns
ns
(di/dt)
on
Turn-on C urrent S lope VDD=80V ID=20A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
300 A/µs
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD=80V ID=20A VGS=10V 30
9
11
45 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage R ise Time
Fall Time
Cross-over Time
VDD=80V ID=20A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
70
55
130
100
80
185
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current
Source-drain Current
(pulsed)
20
80
A
A
V
SD
(∗) Forward On Volt age ISD=20A VGS=0 1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD= 20 A di/dt = 100 A/µs
VDD=20V Tj=150oC
(see test circuit, figure 5)
125
0.44
7
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas Thermal Impedance
STP20N10
3/9
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