SGS Thomson Microelectronics STP19N06LFI, STP19N06L Datasheet

STP19N06L

STP19N06LFI

N - CHANNEL ENHANCEMENT MODE

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V

STP19N06L STP19N06LFI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ LOGIC LEVEL COMPATIBLE INPUT

■ 175

■ APPLICATION ORIENTED

o

C OPERATING TEMPERATURE

DS(on)

DSS

60 V 60 V

= 0.085 Ω

R

DS(on)

< 0.1 Ω < 0.1 Ω

I

D

19 A 13 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP1 9N06L STP19 N0 6L F I

V

I

DM

P

V

T

(•) Pulse width limited by safe operating area

February 1995

Drain-source Voltage (VGS = 0) 60 V

DS

Drain- gate Voltage (RGS = 20 kΩ)60V

DGR

Gate-source Voltage ± 15 V

GS

I

Drain Current (continuous) at Tc = 25 oC1913A

D

I

Drain Current (continuous) at Tc = 100 oC13 9A

D

(•) Drain Current (pulsed) 76 76 A

Total Dissipation at Tc = 25 oC8035W

tot

Dera tin g Fact or 0.53 0.23 W/ Insulation Withstand Voltage (DC)  2000 V

ISO

Stor age Tempe rat ure -65 to 17 5

stg

T

Max. Operating Junction Temperature 175

j

o

C

o

C

o

C

1/7

STP19N06L/FI

THERMAL DATA

TO-220 ISOWATT220

R

thj-case

R

thj-amb

R

th c-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

I

AR

Thermal Resistance Junction-case Max 1.88 4.29 Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ Max im u m Le ad T em perature F or So l de rin g P ur p ose

l

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%)

Sing le Pul se Ava lan che Energy

AS

(starting Tj = 25 oC, ID = IAR, V Repet iti ve Av alan che En erg y

AR

DD

= 25 V)

(pulse width limited by Tj max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive

(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)

62.5

0.5

300

19 A

76 mJ

19 mJ

13 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. U nit

V

(BR) DSS

Drain-source

ID = 250 µA V

= 0 60 V

GS

Bre akdow n Vol tage

I

DSS

I

GSS

Zero Ga te V ol t ag e Drain Current (V

GS

Gate -body Leaka ge

VDS = Max Rating

= 0)

VDS = Max Rating x 0.8 Tc = 125 oC VGS = ± 15 V ± 100 nA

250

1000µAµA

Current (VDS = 0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. U nit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage V Stat ic Dra in-s ourc e On

Resistance

= VGS ID = 250 µA11.72.5V

DS

VGS = 5 V ID = 9.5 A V

= 5 V ID = 9.5 A Tc = 100oC

GS

On State Dra in C urr e nt VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

0.085 0.1

0.2

19 A

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. U nit

g

(∗)Forward

fs

Transconductance

C C C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 9.5 A 7 9 S

= 0 700

GS

230

80

900 300 100

Ω Ω

pF pF pF

2/7

STP19N06L/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. U nit

t

d(on)

(di/dt)

Q Q Q

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. U nit

t

r(Voff)

t

SOURCE DRAIN DIODE

Turn-on Time

t

Rise Time

r

Turn-on Current Slope V

on

Tot al G a te C ha r ge

g

Gate -Sou rce Ch arge

gs

Gate-Drain Charge

gd

Off-voltage Rise Time

t

Fall Time

f

Cross-over Time

c

V

= 30 V ID = 9.5 A

DD

RG = 4.7 Ω VGS = 5 V (see test circuit, figure 3)

= 40 V ID = 19 A

DD

RG = 47 Ω VGS = 5 V (see te s t ci r cui t, fi g ure 5 )

VDD = 40 V ID = 19 A V

V

= 40 V ID = 19 A

DD

RG = 47 Ω VGS = 5 V (see test circuit, figure 5)

= 5 V 18

GS

15

16521230

70 A/µs

26 nC 7 9

50 95

165

70

135 230

ns ns

nC nC

ns ns ns

Symbol Parameter Test Condition s Min. Typ. Max. U nit

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

19

76

(pulsed)

V

(∗) F or w ar d On V ol t ag e ISD = 19 A VGS = 0 1.6 V

SD

t

Q

Reverse Recovery

rr

Time Reverse Recovery

rr

I

= 19 A di/dt = 100 A/µs

SD

VDD = 30 V Tj = 150 oC (see test circuit, figure 5)

60

0.13

Charge

I

RRM

Reverse Recovery

4.6

Current

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

A A

ns

µC

A

3/7