SGS Thomson Microelectronics STP16NE06L, STP16NE06L-FP Datasheet
TYPE V
STP16NE06L
STP16NE06LFP
STP16NE06L
STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE
SINGLE FEATURE SIZE POWER MOSFET
TARGET DATA
DSS
60 V
60 V
R
DS(on)
< 0.12 Ω
< 0.12 Ω
I
D
16 A
11 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
o
■ 175
■ HIGH dV/dt CAPABILITY
■ APPLICATIONORIENTED
COPERATINGTEMPERATURE
DS(on)
=0.09 Ω
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packingdensity for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
Symbol Parameter Value Unit
ST P16NE06L ST P16NE06LF P
V
V
V
I
DM
P
Drain-s ource Volt age (VGS=0) 60 V
DS
Drain- gate Voltage (RGS=20kΩ)60V
DGR
Gate-source Voltage ± 15 V
GS
Drain Cur rent (co nt inu ous ) a t Tc=25oC1611A
I
D
Drain Cur rent (co nt inu ous ) a t Tc=100oC107A
I
D
(•) Drain Current (pulsed) 64 64 A
Tot al Dissipation at Tc=25oC6030W
tot
Derat ing F ac tor 0.4 0.2 W/
V
Insulation W ithstand Voltage (DC) 2000 V
ISO
dV/ dt Peak Diod e Recov ery v olt ag e slope 6 V/ ns
T
(•) Pulse width limitedby safe operating area (1)ISD≤ 16 A,di/dt ≤ 200 A/µs, VDD≤ V
Storage Temperature -65 t o 175
stg
Max. Operating J unc t i on Temperature 175
T
j
(BR)DSS,Tj≤TJMAX
October 1997
o
C
o
C
o
C
1/7
STP16NE06L/FP
THERMAL DATA
TO - 2 20 TO - 220FP
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symb o l Para met er Max Value Uni t
I
AR
E
Ther mal Resistance Junctio n-c ase Max 2.5 5
Ther mal Resistance Junctio n-am bien t Max
Ther mal Resistance Case-sink Typ
Maximum Lead T em p er ature For Soldering P ur pose
l
Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limit ed by T
Single Pu lse Avalanc he E nerg y
AS
(starti ng T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
62.5
0.5
300
16 A
80 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µAVGS=0 60 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leaka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 15V æ 100 nA
GS
1
10
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
R
DS(on)
I
D(on)
Gat e Thres hold Volt age VDS=VGSID=250µA234V
St at ic Drain-source On
Resistance
VGS=5V ID=8A
= 10V ID=8A
V
GS
On S t ate Drain Current VDS>I
D(on)xRDS(on)max
0.090 0.12 Ω
16 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on ductance
C
C
C
Input Capac it an ce
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=8 A 6 S
VDS=25V f=1MHz VGS= 0 800
100
50
µA
µA
pF
pF
pF
2/7
STP16NE06L/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
Q
Q
Q
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safeoperating area
Turn-on Time
Rise Time
r
Tot al Gat e Charge
g
Gate-Source Charge
gs
Gat e- Drain Charge
gd
Off -voltage R ise T ime
t
Fall T ime
f
Cross-over Time
c
VDD=30V ID=8A
=4.7 W VGS=5V
R
G
VDD=40V ID=16A VGS=5V nC
VDD=48V ID=16A
=4.7 Ω VGS=5V
R
G
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗)ForwardOnVoltage ISD=16A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 16 A di/dt = 100 A/µs
=30V Tj= 150oC
V
DD
Charge
Reverse Recovery
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/7
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