SGS Thomson Microelectronics STP16NE06FP, STP16NE06 Datasheet

STP16NE06

®

N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP

TYPE V

STP16NE06 STP16NE06FP

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

o

■ 175

■ HIGH dV/dt CAP A BI LIT Y

■ APPLI CATION ORIENT ED

C OPERATING TEMPERATURE

DS(on)

DSS

60 V 60 V

= 0.08 Ω

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

R

DS(on)

< 0.100 Ω < 0.100 Ω

I

D

16 A 11 A

STP16NE06FP

STripFET POWER MOSFET

PRELIMINARY DATA

3

2

1

TO-220 TO-220FP

INTER NAL SCH E M ATI C DIAG RA M

3

2

1

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERT E RS

■ SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP16NE06 STP16NE06FP

V

I

DM

P

V

dV/dt Peak Diode Recovery voltage slope 6 V/ns

T

(•) Pulse width limited by safe operating area (1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V

New RDS (on) spec. starting from JULY 98

’

June 1998

Drain-source Voltage (VGS = 0) 60 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc = 25 oC1611A

I

D

I

Drain Current (continuous) at Tc = 100 oC107A

D

60 V

(•) Drain Current (pulsed) 64 64 A

Total Dissipation at Tc = 25 oC6030W

tot

Derating Factor 0.4 0.2 W/ Insulation Withstand Voltage (DC)  2000 V

ISO

Storage Temperature -65 to 175

stg

Max. Operating Junction Temperature 175

T

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

1/9

STP16NE06/FP

THERMAL DATA

TO-220 TO-220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Thermal Resistance Junction-case Max 2.5 5 Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

ma x)

j

DD

= 25 V)

62.5

0.5

300

16 A

80 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

60 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125

DS

o

C

V

= ± 20 V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

234V

Voltage

R

DS(on)

Static Drain-source On

VGS = 10V ID = 8 A 0.080 0.100 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

16 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

Transconductance

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID =8 A 6 S

30

1000

140

45

= 0 760

GS

100

µA µA

pF pF pF

2/9

STP16NE06/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Q Q Q

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Turn-on Time Rise Time

r

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Off-voltage Rise Time Fall Time

t

f

Cross-over Time

c

Source-drain Current

(•)

Source-drain Current

V

= 30 V ID = 8 A

DD

R

=4.7 W VGS = 10 V

G

VDD = 40 V ID = 16 A V

V

= 48 V ID = 16 A

DD

=4.7 Ω VGS = 10 V

R

G

= 10 V 20

GS

10 35

5 7

7 18 30

80 40

30 nC

10 25 45

16 64

(pulsed)

(∗) Forward On Voltage ISD = 16 A VGS = 0 1.5 V

Reverse Recovery

rr

Time Reverse Recovery

rr

I

= 16 A di/dt = 100 A/µs

SD

V

= 30 V Tj = 150 oC

DD

70

0.21 Charge Reverse Recovery

6

Current

ns ns

nC nC

ns ns ns

A A

ns

µC

A

Safe Operating Area for TO-220 Safe Operating Are a for TO-220FP

3/9