SGS Thomson Microelectronics STP16NB25FP, STP16NB25 Datasheet

STP16NB25



STP16NB25FP

N - CHANNEL 250V- 0.220Ω - 16A - TO-220/TO-220FP

PowerMESH MOSFET

TYPE V

STP16NB25 ST P16NB25FP

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

250 V 250 V

= 0.220 Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

R

DS(on)

<0.28Ω <0.28Ω

I

D

16 A

8A

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ UNINTERRUPTIBLEPOWERSUPPLY(UPS)

■ DC-DC& DC-ACCONVERTERSFOR

TELECOM,INDUSTRIAL ANDCONSUMER ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP 16NB25 ST P16NB25F P

V

I

DM

P

dv/dt(

V

T

(•) Pulse width limited by safe operating area (1)ISD≤ 16A, di/dt ≤ 200A/µs, VDD≤ V

Dra in- sour c e Volt age (VGS= 0) 250 V

DS

Dra in- gat e Volt age (RGS=20kΩ) 250 V

DGR

Gat e-source Voltage ± 30 V

GS

Dra in Cu rr ent (cont inuous) at Tc=25oC168A

I

D

Dra in Cu rr ent (cont inuous) at Tc=100oC105A

I

D

(•) Drain Cu rr ent ( p uls ed ) 64 32 A

Tot al Dis sipation at Tc=25oC 140 45 W

tot

Der ati ng Fact or 1.12 0.36 W/

) P eak Diode Re c overy voltage sl ope 5.5 5.5 V/ns

1

Insulation W ithsta nd Voltage (DC) ----- 2000 V

ISO

St orage T em pe r at ure -65 to 150

stg

Max. Operating Junction Temperat ur e 150

T

j

(BR)DSS

,Tj≤T

JMAX

o

C

o

C

o

C

March 1999

1/9

STP16NB25/FP

THERMAL DATA

TO-220 TO 220FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max V alue Unit

I

AR

E

Ther mal Res istance Junct ion-case Ma x 0.9 2.77 Ther mal Res istance Junct ion-ambient Max

Ther mal Res istance C as e -s ink Ty p Maximum Lead Tempera tur e For Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

Single Pul s e A v alan che Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

16 A

250 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 250 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain Current ( V

GS

Gat e- bod y Leak ag e Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

=± 30 V

GS

1

10

100 nA

±

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250µA 345V Sta t ic Drain-s ource On

VGS=10V ID= 8 A 0.22 0.28

Resistance

I

D(on)

On StateDrain Current VDS>I

D(on)xRDS(on)max

16 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

Input Capaci t anc e

iss

Out put Capac it ance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=8 A 4 S

VDS=25V f=1MHz VGS= 0 1000

250

40

µA µA

Ω

pF pF pF

2/9

STP16NB25/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay Time Rise Tim e

r

VDD=125V ID=8A R

=4.7

G

Ω

VGS=10V

12 12

(Resis t iv e Load, s ee fig. 3)

Q Q Q

Tot al Gate C harge

g

Gat e- Source Charg e

gs

Gate-Drain Charge

gd

VDD= 200 V ID=16A VGS=10V 29

9

11

38 nC

SWITCHINGOFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y T im e

t

Fall T ime

f

VDD=125V ID=8A

=4.7 Ω VGS=10V

R

G

35

8

(Resis t iv e Load, s ee fig. 3)

t

r(Voff)

t

Off-voltage Rise T im e Fall T ime

f

Cross-over Time

c

V R

=200V ID=16A

CLAM P

=4.7 Ω VGS=10V

G

(Indu ct iv e Load, se e fig. 5)

10

9

20

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

16 64

(pulsed)

(∗)ForwardOnVoltage ISD=16A VGS=0 1.5 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 16 A di/dt = 100 A /µs

=50V Tj=150oC

V

DD

(see test circuit, fig. 5)

210

1.5 Charge Reverse Recovery

14

Current

ns ns

nC nC

ns ns

ns ns ns

A A

ns

µC

A

(∗) Pulsed:Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safeoperating area

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9