SGS Thomson Microelectronics STP14NF12FP, STP14NF12 Datasheet
STP14NF12
STP14NF12FP
N-CHANNEL 120V - 0.16Ω - 14A TO-220/TO-220FP
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE V
STP14NF12
STP14NF12FP
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ APPLICATION ORIENTED
DS
DSS
120 V
120 V
(on) = 0.16Ω
R
DS(on)
< 0.18 Ω
< 0.18 Ω
I
D
14 A
14 A
CHARACTERIZATION
DESCRIPTION
This Power MOSFET series realized with STMicroelectronics uniqueSTripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTRO L
3
TO-220
2
1
TO-220FP
1
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP14NF12 STP14NF12FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns
E
AS
V
ISO
T
j
T
stg
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±20 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 56 34 A
Total Dissipation at TC= 25°C
Derating Factor 0.4 0.17 W/°C
(2)
Single Pulse Avalanche Energy 60 mJ
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(1) ISD≤14A, di/dt ≤300A/µs, VDD≤ V
(2) Starting Tj= 25°C, ID= 14A, VDD=50V
14 8.5 A
60 25 W
120 V
120 V
96A
-55 to 175 °C
(BR)DSS,Tj≤TJMAX.
1/9August 2002
STP14NF12/STP14NF12FP
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 2.5 6 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 120 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±20V ±100 nA
GS
1µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID=7A
= 250µA
234V
0.16 0.18 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=7A 4 S
g
fs
V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 70 pF
Reverse Transfer
Capacitance
=25V,f=1MHz,VGS=0
DS
460 pF
30 pF
2/9
STP14NF12/STP14NF12FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 25 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 14 A
(2)
Source-drain Current (pulsed) 56 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=50V,ID=7A
DD
= 4.7Ω VGS=10V
R
G
(Resistive Load, see Figure 3)
VDD=80V,ID=14A,
V
=10V
GS
VDD=50V,ID=7A,
=4.7Ω, VGS= 10V
R
G
(Resistive Load, see Figure 3)
ISD=14A,VGS=0
= 14 A, di/dt = 100A/µs,
I
SD
VDD=50V,Tj= 150°C
(see test circuit, Figure 5)
16 ns
15.5
21 nC
3.7
4.7
32
8
1.5 V
92
230
5
nC
nC
ns
ns
ns
nC
A
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
3/9
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