SGS Thomson Microelectronics STP14NF12FP, STP14NF12 Datasheet

STP14NF12
STP14NF12FP
N-CHANNEL 120V - 0.16- 14A TO-220/TO-220FP
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE V
STP14NF12 STP14NF12FP
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
APPLICATION ORIENTED
DS
DSS
120 V 120 V
(on) = 0.16
R
DS(on)
< 0.18 < 0.18
I
D
14 A 14 A
CHARACTERIZATION
DESCRIPTION
This Power MOSFET series realized with STMicro­electronics uniqueSTripFET process has specifical­ly been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTRO L
3
TO-220
2
1
TO-220FP
1
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP14NF12 STP14NF12FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns
E
AS
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
Drain-source Voltage (VGS=0) Drain-gate Voltage (RGS=20kΩ) Gate- source Voltage ±20 V Drain Current (continuous) at TC= 25°C Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 56 34 A Total Dissipation at TC= 25°C Derating Factor 0.4 0.17 W/°C
(2)
Single Pulse Avalanche Energy 60 mJ Insulation Withstand Voltage (DC) - 2500 V Operating Junction Temperature Storage Temperature
(1) ISD≤14A, di/dt 300A/µs, VDD≤ V (2) Starting Tj= 25°C, ID= 14A, VDD=50V
14 8.5 A
60 25 W
120 V 120 V
96A
-55 to 175 °C
(BR)DSS,Tj≤TJMAX.
1/9August 2002
STP14NF12/STP14NF12FP
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 2.5 6 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 120 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±20V ±100 nA
GS
A
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID=7A
= 250µA
234V
0.16 0.18
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=7A 4 S
g
fs
V
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance 70 pF Reverse Transfer
Capacitance
=25V,f=1MHz,VGS=0
DS
460 pF
30 pF
2/9
STP14NF12/STP14NF12FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q Q Q
t
r
g gs gd
Turn-on Delay Time Rise Time 25 ns Total Gate Charge
Gate-Source Charge Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 14 A
(2)
Source-drain Current (pulsed) 56 A Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
=50V,ID=7A
DD
= 4.7VGS=10V
G
(Resistive Load, see Figure 3) VDD=80V,ID=14A,
V
=10V
GS
VDD=50V,ID=7A,
=4.7Ω, VGS= 10V
R
G
(Resistive Load, see Figure 3)
ISD=14A,VGS=0
= 14 A, di/dt = 100A/µs,
I
SD
VDD=50V,Tj= 150°C (see test circuit, Figure 5)
16 ns
15.5
21 nC
3.7
4.7
32
8
1.5 V
92
230
5
nC nC
ns ns
ns
nC
A
Safe Operating Area For TO-220
Safe Operating Area For TO-220FP
3/9
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