SGS Thomson Microelectronics STP14NF10, STP14NF10FP, STB14NF10 Datasheet

STB14NF10

STP14NF10 STP14NF10FP

N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK

LOW GATE CHARGE STripFET™ II POWER MOSFET

TYPE

STB14NF10 STP14NF10 STP14NF10FP

■ TYPICAL R

■ EXCEPTIONA L dv/d t CAPABILITY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED

V

DSS

100 V 100 V 100 V

(on) = 0.115 Ω

DS

R

DS(on)

<0.13 <0.13 <0.13

I

D

15 A

Ω

15 A

Ω

10 A

Ω

CHARACTERIZATION

■ SURFACE-MOUNTING D

2

PAK (TO-263)

POWER PACKAG E IN TU BE (NO SU FFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET™ process has specifically been designed to minimiz e inpu t capa citanc e and gate c harge . It is therefore su itable as p rima ry sw itch i n ad vanced hig hefficiency, high-frequency isolate d DC-DC c onverters for T elecom and Computer applications. It is also intended for any applications with low gate drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-DC CONVERTERS

■ UPS AND MOTOR CONTROL

3

2

1

TO-220FP

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

1

D2PAK

TO-263

(Suffix “T4”)

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STB14NF10 STP14NF10

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage ± 20 V

Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 60 40 A Total Dissipation at TC = 25°C

15 10 A 10 6.3 A

60 25 W

V

I

V

DM

P

DS

DGR

GS

I

D

I

D

(

tot

Derating Factor 0.4 0.17 W/°C

(1)

dv/dt

E

AS

V

ISO

T

stg

T

j

(

Pulse width l i mited by safe operating area . (1) ISD ≤14A, di/dt ≤300A/ µ s , VDD ≤ V

•)

.

Peak Diode Recovery voltage slope 9 V/ns

(2)

Single Pulse Avalanche Energy 70 mJ Insulation Withstand Voltage (DC) ------ 2000 V Storage Temperature Operating Junction Temperature

(2) Starting Tj = 25 oC, ID = 15A, VDD= 50V

-55 to 175 °C

STP14NF10FP

100 V 100 V

, Tj ≤ T

(BR)DSS

JMAX

1/11June 2002

STB14NF10 STP14NF10 STP14NF10FP

THERMA L D ATA

D2PAK

TO-220

Rthj-case Thermal Resistance Junction-case Max 2.5 6 °C/W

TO-220FP

Rthj-amb

T

ELECTRICAL CHARACTERISTICS (T

Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose

l

= 25 °C unless otherwise specified)

case

Max 62.5

300

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

= 250 µA, VGS = 0

D

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20 V

GS

100 V

1

10

±100 nA

ON

V

(BR)DSS

I

DSS

I

GSS

(*)

Drain-source Breakdown Voltage

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

= VGS I

DS

V

= 10 V ID = 7 A

GS

= 250 µA

D

234V

0.115 0.13

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

= 15 V ID=7 A

DS

= 25V, f = 1 MHz, VGS = 0

V

DS

20 S

460

70 30

°C/W

°C

µA µA

Ω

pF pF pF

2/11

STB14NF10 STP14NF10 STP14NF10FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 7 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

= 80 V ID= 12 A VGS= 10V

V

DD

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 50 V ID = 7 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.

(

•)Pulse width limited by saf e operating ar ea.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 14 A VGS = 0

SD

= 14 A di/dt = 100A/µs

I

SD

V

= 50 V Tj = 150°C

DD

(see test circuit, Figure 5)

16 25

15.5

3.7

4.7

32

8

90

230

5

21 nC

15 60

1.5 V

ns ns

nC nC

ns ns

A A

ns

nC

A

Safe Operating Area for TO-220FPSafe Operating Area for TO-220

3/11

STB14NF10 STP14NF10 STP14NF10FP

Thermal Impedance Thermal Impedance for TO-220FP

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

4/11