SGS Thomson Microelectronics STP14NF06 Datasheet
STP14NF06
N-CHANNEL 60V - 0.1Ω - 14A TO-220
STripFET™ POWER MOSFET
TYPE V
DSS
STP14NF10 60 V < 0.12
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ LOW GATE CHARGE AT 100 °C
■ APPLICATION ORIENTED
(on) = 0.1Ω
DS
R
DS(on)
I
D
Ω
14 A
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is t he latest development of
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resistance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ±20 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 56 A
Total Dissipation at TC = 25°C
14 A
10 A
45 W
Derating Factor 0.3 W/°C
(2)
Single Pulse Avalanche Energy 50 mJ
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) ISD ≤7A, di/dt ≤300A/µs, VDD ≤ V
(2) Starting Tj = 25°C, ID = 114A, VDD = 15V
(BR)DSS
, Tj ≤ T
JMAX.
1/8December 2000
STP14NF06
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 60 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 7 A
2V
0.10 0.12
1µA
10 µA
Resistance
Ω
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max,
14 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 54 pF
Reverse Transfer
Capacitance
ID= 7 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
7S
361 pF
21 pF
2/8
STP14NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 32 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 % .
2. Pulse width li mited by safe operating area.
Source-drain Current 14 A
(1)
Source-drain Current (pulsed) 56 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 30V, ID = 7 A
DD
R
= 4.7Ω VGS = 10V
G
(see test circuit, Figure 3)
VDD = 48 V, ID = 14 A,
VGS = 10V
VDD = 30 V, ID = 7 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
ISD = 14 A, VGS = 0
= 14 A, di/dt = 100A/µs,
I
SD
VDD = 30 V, Tj = 150°C
(see test circuit, Figure 5)
12.5 ns
11.2
15 nC
3.7
3.2
30
9.5
1.3 V
38
61
3.2
nC
nC
ns
ns
ns
nC
A
Safe Operating Area Thermal Impedence
3/8
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