SGS Thomson Microelectronics STW13NK60Z, STP13NK60Z, STP13NK60ZFP, STB13NK60Z-1, STB13NK60Z Datasheet
STP13NK60Z/FP, STB13NK60Z
STB13NK60Z-1, STW13NK60Z
N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP13NK60Z
STP13NK60ZFP
STB13NK60Z
STB13NK60Z-1
STW13NK60Z
■ TYPICAL R
■ EXTREMELY HIGHdv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSICCAPACITANCES
■ VERY GOOD MANUFACTURING
600 V
600 V
600 V
600 V
600 V
(on) = 0.48 Ω
DS
DSS
R
DS(on)
< 0.55 Ω
< 0.55 Ω
< 0.55 Ω
< 0.55 Ω
< 0.55 Ω
I
D
13 A
13 A
13 A
13 A
13 A
Pw
150 W
35 W
150 W
150 W
150 W
REPEATIBILITY
DESCRIPTION
The SuperMESH ™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensur e a ver y good dv /dt capability for the
most demanding applicat ions. Such series complements S T full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220
1
3
2
1
TO-247
3
2
TO-220FP
D2PAK
I2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP13NK60Z P13NK60Z TO-220 TUBE
STP13NK60ZFP P13NK60ZFP TO-220FP TUBE
STB13NK60ZT4 B13NK60Z
STB13NK60Z B13NK60Z
STB13NK60Z-1
B13NK60Z
STW13NK60Z W13NK60Z TO-247 TUBE
2
PAK
D
2
D
I
2
PAK
PAK
(ONLY UNDER REQUEST)
TAPE & REEL
TUBE
TUBE
1/14February 2003
STP13NK60Z, STP13N K 60ZFP, STB13NK 60Z, STB13NK60Z-1, STW13NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP13NK60Z
STB13NK60Z/-1
STW13NK60Z
I
V
DM
P
V
DGR
V
I
I
TOT
DS
GS
D
D
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 52 52 (*) A
Total Dissipation at TC= 25°C
13 13 (*) A
8.2 8.2 (*) A
150 35 W
Derating Factor 1.20 0.27 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤13 A, di/dt ≤200A/µs, VDD≤ V
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55 to 150 °C
STP13NK60ZFP
600 V
600 V
THERMAL DATA
TO-220
2
I
PAK
D2PAK
TO-220FP
TO-247
Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max (#) 60 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
Maximum Lead Temperature For Soldering Purpose
l
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
10 A
400 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD c apability, but also to make them sa fely absorb pos sible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achie ve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid t he
usage of external components.
2/14
STP13NK60Z, STP13N K 60ZFP, STB13NK60 Z, STB13NK60Z-1, STW13NK60Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1mA,VGS= 0 600 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20 V ±10 µA
GS
V
DS=VGS,ID
= 100 µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 5 A 0.48 0.55 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=8V,ID=5A 11 S
g
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 2030
V
DS
210
48
VGS=0V,VDS= 0V to 480 V 125 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=300V,ID=5A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
=480V,ID=10A,
V
DD
V
=10V
GS
22
14
66
11
33
92
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 300 V, ID=5A
R
=4.7ΩVGS=10V
G
61
12
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
= 480V, ID=10A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
10
9
20
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=10A,VGS=0
I
SD
VDD=35V,Tj= 150°C
(see test circuit, Figure 5)
= 10 A, di/dt = 100 A/µs
570
4.5
16
when VDSincreases from 0 to 80%
oss
10
40
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/14
STP13NK60Z, STP13N K 60ZFP, STB13NK 60Z, STB13NK60Z-1, STW13NK60Z
Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Imped ance For TO-220/ D2PAK/I2PAK
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
4/14
Thermal Impedance For TO-247Safe Operating Area For TO-247
STP13NK60Z, STP13N K 60ZFP, STB13NK60 Z, STB13NK60Z-1, STW13NK60Z
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source O n Resistance
Capacitance VariationsGate Charge vs Gate-so urce Voltage
5/14
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