SGS Thomson Microelectronics STP12NM50FP, STP12NM50, STB12NM50-1 Datasheet

STP12NM50 - STP12NM50FP

STB12NM50-1

N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP

TYPE V

STP12NM50/FP 500V <0.35Ω 12 A
STB12NM50-1 500V <0.35Ω 12 A

■ TYPICAL R

■ HIGH dv/dt ANDAVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE CHARGE

■ LOW GATE INPUT RESISTANCE

■ TIGHT PROCESS CONTROL AND HIGH

DS

DSS

(on) = 0.3Ω

MANUFACTURING YIELDS

DESCRIPTION

The MDmesh is a new revolutionary MOSFET tech­nology that associates the Multiple Drain process with
the Company’sPowerMESH horizontal layout. The
resulting product has an outstanding low on-resis­tance, impressively high dv/dt andexcellent avalanche
characteristics. The adoption of the Company’s propri­etary strip technique yields overall dynamic perfor­mance that is significantly better than that of similar
competition’s products.

R

DS(on)

I

D

/I

PAK

MDmeshPower MOSFET

TO-220

2

1

I PAK

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

TO-220FP

3

1

3

2

APPLICATIONS

The MDmesh family is very suitable for increasing
power density of high voltage converters allowing sys­tem miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)12NM50(-1) STP12NM50FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns

V

ISO

T

stg

T

(•)Pulse width limitedby safe operating area

This is preliminary information ona new product now in development or undergoing evaluation. Details are subject to change without notice.

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C

(●)

Drain Current (pulsed) 48 48(*) A
TotalDissipation at TC=25°C
Derating Factor 0.88 0.28 W/°C

Insulation Winthstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

j

(1)ISD≤12A, di/dt ≤200A/µs, VDD≤ V
(*)Limited only by maximum temperature allowed

12 12(*) A

7.5 7.5(*) A

110 35 W

500 V
500 V

(BR)DSS,Tj≤TJMAX.

1/10April 2000

STP12NM50/FP/STB12NM50-1

THERMAL DATA

TO-220 / I PAK TO-220FP

Rthj-case Thermal Resistance Junction-c ase Max 1.13 3.57 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering P urpose 300 °C

Avalanche Current, Repetitive or Not-Repetitiv e
(pulse width limited by T

max)

j

Single Pu lse Avala nche Energy
(starting T

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

=25°C, ID=IAR,VDD=50V)

j

I

= 250 µ A, VGS=0

D

= Max R ating

V

DS

=0)

DS

GS

=0)

V

= Max R ating, TC= 125 ° C

DS

= ±30V

V

GS

500 V

12 A

400 mJ

1 µA

10 µA

±100 nA

ON (1)

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Thre shold Voltage
Static Drain-source On

Resistance
On State Drain Current

V

DS=VGS,ID

V

= 10V, ID=6A

GS

V

DS>ID(on)xRDS(on)max,

= 250µA

VGS=10V

345V

0.3 0.35 Ω

12 A

DYNAMIC

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

V

(1)

g

fs

C

iss

C

oss

C

rss

R

g

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Forward Transconductance
Input Capacitance

Output Capacitance 180 pF
Reverse Transfer

Capacitance

Gate Input Resistance

DS>ID(on)xRDS(on)max,

ID=6A

V

= 25V, f = 1 MHz, VGS=0

DS

f=1 MHz G ate DC Bias=0
Test Signal Level=20mV
Open D rain

5.2 S

1000 pF

25 pF

1.6 Ω

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STP12NM50/FP/STB12NM50-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time 10 ns
TotalGate Charge

Gate-Source Charge 8 nC
Gate-Drain Charge 15 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 8 ns
Cross-over Time 18 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 12 A

(2)

Source-drain Current (pulsed) 48 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 5.25 µC
Reverse Recovery Current 30 A

V

= 250V, ID=6A

DD

= 4.7Ω VGS= 10V

R

G

(see test circuit, Figure 3)

V

= 400V, ID= 12A,

DD

= 10V

V

GS

V

= 400V, ID=12A,

DD

=4.7Ω, VGS= 10V

R

G

(see test circuit, Figure 5)

ISD=12A,VGS=0
I

= 12 A, di/dt = 100A/µs,

SD

= 100V, Tj= 150°C

V

DD

(see test circuit, Figure 5)

20 ns

28 nC

19 ns

1.5 V

350 ns

Safe Operating Area For TO-220 / I P AK Safe Operating Area For TO-220FP

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